Thermoelectric power factors of defective scandium nitride nanostructures from first principles

Fuente: arXiv
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Auteurs principaux: Cigarini, Luigi, Wdowik, Urszula Danuta, Legut, Dominik
Format: Preprint
Publié: 2025
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author Cigarini, Luigi
Wdowik, Urszula Danuta
Legut, Dominik
author_facet Cigarini, Luigi
Wdowik, Urszula Danuta
Legut, Dominik
contents The thermoelectric properties of scandium nitride are strongly influenced by structural and electronic factors arising from defects and impurities. Nevertheless, the mechanisms by which these microscopic features affect transport are not yet fully understood. Experiments show a large variability in the electronic transport properties, with a strong dependence on the experimental conditions, and attempts to improve thermoelectric efficiency often lead to conflicting effects. In this work, we employ the Landauer approach to analyze the effects of different kinds of structural defects and impurities on electronic transport in scandium nitride. This approach allows us to relate the transport mechanisms to the structural and electronic modifications introduced in the lattice, with atomistic resolution. In light of these new insights, we propose a rationale relating part of the experimental variability to its microscopic origin.
format Preprint
id arxiv_https___arxiv_org_abs_2509_14762
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Thermoelectric power factors of defective scandium nitride nanostructures from first principles
Cigarini, Luigi
Wdowik, Urszula Danuta
Legut, Dominik
Materials Science
Mesoscale and Nanoscale Physics
Applied Physics
Chemical Physics
Computational Physics
The thermoelectric properties of scandium nitride are strongly influenced by structural and electronic factors arising from defects and impurities. Nevertheless, the mechanisms by which these microscopic features affect transport are not yet fully understood. Experiments show a large variability in the electronic transport properties, with a strong dependence on the experimental conditions, and attempts to improve thermoelectric efficiency often lead to conflicting effects. In this work, we employ the Landauer approach to analyze the effects of different kinds of structural defects and impurities on electronic transport in scandium nitride. This approach allows us to relate the transport mechanisms to the structural and electronic modifications introduced in the lattice, with atomistic resolution. In light of these new insights, we propose a rationale relating part of the experimental variability to its microscopic origin.
title Thermoelectric power factors of defective scandium nitride nanostructures from first principles
topic Materials Science
Mesoscale and Nanoscale Physics
Applied Physics
Chemical Physics
Computational Physics
url https://arxiv.org/abs/2509.14762