Coupling 4H-Silicon Carbide spins to a microwave resonator at milli-Kelvin temperature
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866915737371672576 |
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| author | Fawaz, Ali Bourhill, Jeremy Castelletto, Stefania Abe, Hiroshi Ohshima, Takeshi Tobar, Michael Volz, Thomas Goryachev, Maxim Nair, Sarath Raman |
| author_facet | Fawaz, Ali Bourhill, Jeremy Castelletto, Stefania Abe, Hiroshi Ohshima, Takeshi Tobar, Michael Volz, Thomas Goryachev, Maxim Nair, Sarath Raman |
| contents | Coupling microwave cavity modes with spin qubit transitions is crucial for enabling efficient qubit readout and control, long-distance qubit coupling, quantum memory implementation, and entanglement generation. We experimentally observe the coupling of different spin qubit transitions in Silicon Carbide (SiC) material to a 3D microwave (MW resonator mode around 12.6~GHz at a temperature of 10~mK. Tuning the spin resonances across the cavity resonance via magnetic-field sweeps, we perform MW cavity transmission measurements. We observe spin transitions of different spin defects that are detuned from each other by around 60-70~MHz. By optically exciting the SiC sample placed in the MW cavity with an 810~nm laser, we observe the coupling of an additional spin resonance to the MW cavity, also detuned by around 60-70 MHz from the centre resonance. We perform complementary confocal optical spectroscopy as a function of temperature from 4~K to 200~K. Combining the confocal spectroscopy results and a detailed analysis of the MW-resonator-based experiments, we attribute the spin resonances to three different paramagnetic defects: positively-charged carbon antisite vacancy pair (CAV$^+$), and the negatively-charged silicon vacancy spins located at two different lattice sites, namely V$_1$ and V$_2$ spins. The V$_1$ and V$_2$ lines in SiC are interesting qubit transitions since they are known to be robust to decoherence. Additionally, the CAV$^+$-transition is known to be a bright single-photon source. Consequently, the demonstration of the joint coupling of these spin qubits to a MW cavity mode could lead to interesting new modalities: The microwave cavity could act as an information bus and mediate long-range coupling between the spins, with potential applications in quantum computing and quantum communication, which is an attractive proposition in a CMOS-compatible material such as SiC. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2509_14840 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Coupling 4H-Silicon Carbide spins to a microwave resonator at milli-Kelvin temperature Fawaz, Ali Bourhill, Jeremy Castelletto, Stefania Abe, Hiroshi Ohshima, Takeshi Tobar, Michael Volz, Thomas Goryachev, Maxim Nair, Sarath Raman Quantum Physics 81V80 (Primary), 81V10 (Secondary) Coupling microwave cavity modes with spin qubit transitions is crucial for enabling efficient qubit readout and control, long-distance qubit coupling, quantum memory implementation, and entanglement generation. We experimentally observe the coupling of different spin qubit transitions in Silicon Carbide (SiC) material to a 3D microwave (MW resonator mode around 12.6~GHz at a temperature of 10~mK. Tuning the spin resonances across the cavity resonance via magnetic-field sweeps, we perform MW cavity transmission measurements. We observe spin transitions of different spin defects that are detuned from each other by around 60-70~MHz. By optically exciting the SiC sample placed in the MW cavity with an 810~nm laser, we observe the coupling of an additional spin resonance to the MW cavity, also detuned by around 60-70 MHz from the centre resonance. We perform complementary confocal optical spectroscopy as a function of temperature from 4~K to 200~K. Combining the confocal spectroscopy results and a detailed analysis of the MW-resonator-based experiments, we attribute the spin resonances to three different paramagnetic defects: positively-charged carbon antisite vacancy pair (CAV$^+$), and the negatively-charged silicon vacancy spins located at two different lattice sites, namely V$_1$ and V$_2$ spins. The V$_1$ and V$_2$ lines in SiC are interesting qubit transitions since they are known to be robust to decoherence. Additionally, the CAV$^+$-transition is known to be a bright single-photon source. Consequently, the demonstration of the joint coupling of these spin qubits to a MW cavity mode could lead to interesting new modalities: The microwave cavity could act as an information bus and mediate long-range coupling between the spins, with potential applications in quantum computing and quantum communication, which is an attractive proposition in a CMOS-compatible material such as SiC. |
| title | Coupling 4H-Silicon Carbide spins to a microwave resonator at milli-Kelvin temperature |
| topic | Quantum Physics 81V80 (Primary), 81V10 (Secondary) |
| url | https://arxiv.org/abs/2509.14840 |