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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2509.14888 |
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| _version_ | 1866911161662832640 |
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| author | Suhana, A. Svetikova, T. A. U. Schneider, C. Helm, M. Anisimov, A. N. Astakhov, G. V. |
| author_facet | Suhana, A. Svetikova, T. A. U. Schneider, C. Helm, M. Anisimov, A. N. Astakhov, G. V. |
| contents | We report the experimental realization of a quantum silicon carbide microscope (QSiCM) and demonstrate its functionality by imaging magnetic fields generated by electrical currents. We employ a dual-frequency sensing protocol to enhance the readout contrast and suppress noise arising from strain and temperature fluctuations. This approach enables spatial imaging of current-induced magnetic fields with a field of view of $50 \times 50 $ virtual pixels, temporal resolution of $50\,\mathrm{ms}$, spatial resolution of $30\,\mathrm{μm}$ and sensitivity of about $2\,\mathrm{μT \, Hz^{-1/2}}$ per pixel. Further sensitivity enhancement is anticipated through the use of isotopically purified SiC and improved light collection in crystallographically optimized wafer orientations. In addition, we implement a microwave-free imaging protocol based on spin level anticrossing, offering simplified operation with enhanced sensitivity. The demonstrated platform is compatible with commercial, wafer-scale fabrication and holds strong potential for applications in biomedical imaging and diagnostics, as well as non-invasive current and temperature mapping in high-power electronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_14888 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Imaging of electrical signals in a quantum SiC microscope Suhana, A. Svetikova, T. A. U. Schneider, C. Helm, M. Anisimov, A. N. Astakhov, G. V. Quantum Physics We report the experimental realization of a quantum silicon carbide microscope (QSiCM) and demonstrate its functionality by imaging magnetic fields generated by electrical currents. We employ a dual-frequency sensing protocol to enhance the readout contrast and suppress noise arising from strain and temperature fluctuations. This approach enables spatial imaging of current-induced magnetic fields with a field of view of $50 \times 50 $ virtual pixels, temporal resolution of $50\,\mathrm{ms}$, spatial resolution of $30\,\mathrm{μm}$ and sensitivity of about $2\,\mathrm{μT \, Hz^{-1/2}}$ per pixel. Further sensitivity enhancement is anticipated through the use of isotopically purified SiC and improved light collection in crystallographically optimized wafer orientations. In addition, we implement a microwave-free imaging protocol based on spin level anticrossing, offering simplified operation with enhanced sensitivity. The demonstrated platform is compatible with commercial, wafer-scale fabrication and holds strong potential for applications in biomedical imaging and diagnostics, as well as non-invasive current and temperature mapping in high-power electronic devices. |
| title | Imaging of electrical signals in a quantum SiC microscope |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2509.14888 |