Gespeichert in:
| Hauptverfasser: | , , , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2025
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| Schlagworte: | |
| Online-Zugang: | https://arxiv.org/abs/2509.14888 |
| Tags: |
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Inhaltsangabe:
- We report the experimental realization of a quantum silicon carbide microscope (QSiCM) and demonstrate its functionality by imaging magnetic fields generated by electrical currents. We employ a dual-frequency sensing protocol to enhance the readout contrast and suppress noise arising from strain and temperature fluctuations. This approach enables spatial imaging of current-induced magnetic fields with a field of view of $50 \times 50 $ virtual pixels, temporal resolution of $50\,\mathrm{ms}$, spatial resolution of $30\,\mathrm{μm}$ and sensitivity of about $2\,\mathrm{μT \, Hz^{-1/2}}$ per pixel. Further sensitivity enhancement is anticipated through the use of isotopically purified SiC and improved light collection in crystallographically optimized wafer orientations. In addition, we implement a microwave-free imaging protocol based on spin level anticrossing, offering simplified operation with enhanced sensitivity. The demonstrated platform is compatible with commercial, wafer-scale fabrication and holds strong potential for applications in biomedical imaging and diagnostics, as well as non-invasive current and temperature mapping in high-power electronic devices.