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| Hauptverfasser: | , , , , , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2025
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| Online-Zugang: | https://arxiv.org/abs/2509.15715 |
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| _version_ | 1866909967795093504 |
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| author | Shin, Seungheon Cao, Can Pratt, Jon Zhu, Yinxuan Klein, Brianna A. Armstrong, Andrew Allerman, Andrew A. Rajan, Siddharth |
| author_facet | Shin, Seungheon Cao, Can Pratt, Jon Zhu, Yinxuan Klein, Brianna A. Armstrong, Andrew Allerman, Andrew A. Rajan, Siddharth |
| contents | We report ultra-wide bandgap (UWBG) AlGaN heterostructure field-effect transistors (HFETs) exhibiting a high breakdown field (> 5.3 MV/cm) and a low contact resistance (~1.55 Ωmm), tailored for high-power radiofrequency applications. A split-doped barrier architecture, employing two distinct doping concentrations, is shown to enhance both the breakdown field and contact resistance. This design enables a state-of-the-art combination of maximum drain current (487 mA/mm) and breakdown field, along with a high cutoff frequency of 7.2 GHz. These results demonstrate a viable pathway to push device performance toward the material limits while minimizing contact resistance in UWBG AlGaN HFETs, paving the way for next-generation high-power, high-frequency applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_15715 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Barrier Electrostatics and Contact Engineering for Ultra-Wide Bandgap AlGaN HFETs Shin, Seungheon Cao, Can Pratt, Jon Zhu, Yinxuan Klein, Brianna A. Armstrong, Andrew Allerman, Andrew A. Rajan, Siddharth Materials Science Applied Physics We report ultra-wide bandgap (UWBG) AlGaN heterostructure field-effect transistors (HFETs) exhibiting a high breakdown field (> 5.3 MV/cm) and a low contact resistance (~1.55 Ωmm), tailored for high-power radiofrequency applications. A split-doped barrier architecture, employing two distinct doping concentrations, is shown to enhance both the breakdown field and contact resistance. This design enables a state-of-the-art combination of maximum drain current (487 mA/mm) and breakdown field, along with a high cutoff frequency of 7.2 GHz. These results demonstrate a viable pathway to push device performance toward the material limits while minimizing contact resistance in UWBG AlGaN HFETs, paving the way for next-generation high-power, high-frequency applications. |
| title | Barrier Electrostatics and Contact Engineering for Ultra-Wide Bandgap AlGaN HFETs |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2509.15715 |