Atomic-Scale Insights into the Switching Mechanisms of RRAM Devices
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866918144847642624 |
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| author | Chowdhury, Md Tawsif Rahman Moazzeni, Alireza Tutuncuoglu, Gozde |
| author_facet | Chowdhury, Md Tawsif Rahman Moazzeni, Alireza Tutuncuoglu, Gozde |
| contents | The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM) devices have emerged as promising candidates for beyond von Neumann computing paradigms, such as neuromorphic computing, offering voltage-history-dependent switching that mimics synaptic and neural behaviors. Atomic-scale mechanisms, such as defect-driven filament formation and ionic transport, govern these switching processes. In this work, we present a comprehensive characterization of Tantalum Oxide based RRAM devices featuring both oxygen-rich and oxygen-deficient switching layers. We analyze the dominant conduction mechanisms underpinning resistive switching and systematically evaluate how oxygen stoichiometry influences device behavior. Leveraging a bottom-up design methodology, we link material composition to electrical performance metrics-such as endurance, cycle-to-cycle variability, and multilevel resistance states-providing actionable guidelines for optimizing RRAM architectures for energy-efficient memory and computing applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_16512 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Atomic-Scale Insights into the Switching Mechanisms of RRAM Devices Chowdhury, Md Tawsif Rahman Moazzeni, Alireza Tutuncuoglu, Gozde Applied Physics Materials Science Emerging Technologies The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM) devices have emerged as promising candidates for beyond von Neumann computing paradigms, such as neuromorphic computing, offering voltage-history-dependent switching that mimics synaptic and neural behaviors. Atomic-scale mechanisms, such as defect-driven filament formation and ionic transport, govern these switching processes. In this work, we present a comprehensive characterization of Tantalum Oxide based RRAM devices featuring both oxygen-rich and oxygen-deficient switching layers. We analyze the dominant conduction mechanisms underpinning resistive switching and systematically evaluate how oxygen stoichiometry influences device behavior. Leveraging a bottom-up design methodology, we link material composition to electrical performance metrics-such as endurance, cycle-to-cycle variability, and multilevel resistance states-providing actionable guidelines for optimizing RRAM architectures for energy-efficient memory and computing applications. |
| title | Atomic-Scale Insights into the Switching Mechanisms of RRAM Devices |
| topic | Applied Physics Materials Science Emerging Technologies |
| url | https://arxiv.org/abs/2509.16512 |