Bulk-edge coulping induced by a moving impurity

Fuente: arXiv
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Main Authors: Yuan, Baikang, Gong, Jiangbin
Format: Preprint
Published: 2025
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_version_ 1866909997327187968
author Yuan, Baikang
Gong, Jiangbin
author_facet Yuan, Baikang
Gong, Jiangbin
contents More physics at the boundaries of a topological lattice remains to be explored for future applications of topological edge states. This work investigates the stability of topological edge states in the presence of a moving impurity. By modeling the impurity as a moving Gaussian on-site potential at the boundary of a two-dimensional (2D) lattice, we show that a moving impurity may cause significant modifications to edge transport, a feature markedly different from the expected robustness of edge transport against a static impurity. We further identify an interesting mechanism to explain the bulk-edge coupling using a co-moving frame, where the density of the bulk states and the degeneracy between the edge states and the bulk become key elements. The physical insights developed in this work are validated across multiple systems, including Chern insulators, quantum spin Hall insulators, and Floquet Chern insulators. Results presented in this work are complementary to our current understanding of the robustness of topological edge transport.
format Preprint
id arxiv_https___arxiv_org_abs_2509_16562
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Bulk-edge coulping induced by a moving impurity
Yuan, Baikang
Gong, Jiangbin
Mesoscale and Nanoscale Physics
Other Condensed Matter
More physics at the boundaries of a topological lattice remains to be explored for future applications of topological edge states. This work investigates the stability of topological edge states in the presence of a moving impurity. By modeling the impurity as a moving Gaussian on-site potential at the boundary of a two-dimensional (2D) lattice, we show that a moving impurity may cause significant modifications to edge transport, a feature markedly different from the expected robustness of edge transport against a static impurity. We further identify an interesting mechanism to explain the bulk-edge coupling using a co-moving frame, where the density of the bulk states and the degeneracy between the edge states and the bulk become key elements. The physical insights developed in this work are validated across multiple systems, including Chern insulators, quantum spin Hall insulators, and Floquet Chern insulators. Results presented in this work are complementary to our current understanding of the robustness of topological edge transport.
title Bulk-edge coulping induced by a moving impurity
topic Mesoscale and Nanoscale Physics
Other Condensed Matter
url https://arxiv.org/abs/2509.16562