Tunneling magnetoresistance in a junction made of $X$-wave magnets with $X=p,d,f,g,i$
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arXiv
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866914449821007872 |
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| author | Ezawa, Motohiko |
| author_facet | Ezawa, Motohiko |
| contents | We investigate the tunneling magnetoresistance (TMR) of a bilayer system made of $X$-wave magnets with $X=p,d,f,g,i$, where $X=d,g,i$ corresponds to altermagnets. A universal analytic formula is derived for the TMR ratio. It is proportional to $\left\vert J\right\vert /\left( N_{X}Γ\right) $ for small $Γ$, where $N_{X}$ is the number of the nodes of the $X$% -wave magnet, $J$ is the strength of the $X$-wave magnet, and $Γ$ is the self-energy. It is contrasted with the TMR ratio made of ferromagnets, where it is proportional to $J^{2}/Γ^{2}$ for small $Γ$. Therefore, the TMR ratio is larger in ferromagnets for $\left\vert J\right\vert >Γ$. However, the $X$-wave magnets are expected to achieve high-speed and ultra-dense memory owing to the zero net magnetization. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_16867 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Tunneling magnetoresistance in a junction made of $X$-wave magnets with $X=p,d,f,g,i$ Ezawa, Motohiko Mesoscale and Nanoscale Physics Applied Physics We investigate the tunneling magnetoresistance (TMR) of a bilayer system made of $X$-wave magnets with $X=p,d,f,g,i$, where $X=d,g,i$ corresponds to altermagnets. A universal analytic formula is derived for the TMR ratio. It is proportional to $\left\vert J\right\vert /\left( N_{X}Γ\right) $ for small $Γ$, where $N_{X}$ is the number of the nodes of the $X$% -wave magnet, $J$ is the strength of the $X$-wave magnet, and $Γ$ is the self-energy. It is contrasted with the TMR ratio made of ferromagnets, where it is proportional to $J^{2}/Γ^{2}$ for small $Γ$. Therefore, the TMR ratio is larger in ferromagnets for $\left\vert J\right\vert >Γ$. However, the $X$-wave magnets are expected to achieve high-speed and ultra-dense memory owing to the zero net magnetization. |
| title | Tunneling magnetoresistance in a junction made of $X$-wave magnets with $X=p,d,f,g,i$ |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2509.16867 |