THz electrodynamics and superconducting energy scales of ZrN thin films

Fuente: arXiv
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Main Authors: Saritas, Ozan, Bolle, Frederik, Lin, Yayi, Dressel, Martin, Potjan, Roman, Wislicenus, Marcus, Reck, Andre, Scheffler, Marc
Format: Preprint
Published: 2025
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_version_ 1866914050390097920
author Saritas, Ozan
Bolle, Frederik
Lin, Yayi
Dressel, Martin
Potjan, Roman
Wislicenus, Marcus
Reck, Andre
Scheffler, Marc
author_facet Saritas, Ozan
Bolle, Frederik
Lin, Yayi
Dressel, Martin
Potjan, Roman
Wislicenus, Marcus
Reck, Andre
Scheffler, Marc
contents The terahertz (THz) properties of ZrN thin films grown with CMOS-techniques on industry-standard 300 mm silicon wafers are investigated in order to explore their superconducting behavior. The films have thicknesses ranging from 18 to 48 nm, and their critical temperatures Tc are between 5 and 7.3 K. We probe the real and imaginary parts of the complex dynamical conductivity sigma in the frequency range from 100 - 540 GHz (0.4 - 2.2 meV) and as a function of temperature. The experiments provide direct access to the low-energy electrodynamics and key materials parameters such as superconducting energy gap and superfluid density. Our findings indicate that ZrN is a weakly coupled BCS-type superconductor with a gap-to-Tc ratio of approximately 3.4 in the thick film limit. For thinner films, this coupling ratio increases up to 4.0, departing from the BCS prediction. The results establish large-scale ZrN thin films as promising material for high-frequency superconducting applications.
format Preprint
id arxiv_https___arxiv_org_abs_2509_17272
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle THz electrodynamics and superconducting energy scales of ZrN thin films
Saritas, Ozan
Bolle, Frederik
Lin, Yayi
Dressel, Martin
Potjan, Roman
Wislicenus, Marcus
Reck, Andre
Scheffler, Marc
Superconductivity
The terahertz (THz) properties of ZrN thin films grown with CMOS-techniques on industry-standard 300 mm silicon wafers are investigated in order to explore their superconducting behavior. The films have thicknesses ranging from 18 to 48 nm, and their critical temperatures Tc are between 5 and 7.3 K. We probe the real and imaginary parts of the complex dynamical conductivity sigma in the frequency range from 100 - 540 GHz (0.4 - 2.2 meV) and as a function of temperature. The experiments provide direct access to the low-energy electrodynamics and key materials parameters such as superconducting energy gap and superfluid density. Our findings indicate that ZrN is a weakly coupled BCS-type superconductor with a gap-to-Tc ratio of approximately 3.4 in the thick film limit. For thinner films, this coupling ratio increases up to 4.0, departing from the BCS prediction. The results establish large-scale ZrN thin films as promising material for high-frequency superconducting applications.
title THz electrodynamics and superconducting energy scales of ZrN thin films
topic Superconductivity
url https://arxiv.org/abs/2509.17272