Electronic structure and optical signatures of highly-doped graphene

Fuente: arXiv
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Autori principali: Herrera-González, Saúl Antonio, Parra-Martínez, Guillermo, Guinea, Francisco, Silva-Guillén, Jose Angel, Pantaleón, Pierre A., Naumis, Gerardo G.
Natura: Preprint
Pubblicazione: 2025
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author Herrera-González, Saúl Antonio
Parra-Martínez, Guillermo
Guinea, Francisco
Silva-Guillén, Jose Angel
Pantaleón, Pierre A.
Naumis, Gerardo G.
author_facet Herrera-González, Saúl Antonio
Parra-Martínez, Guillermo
Guinea, Francisco
Silva-Guillén, Jose Angel
Pantaleón, Pierre A.
Naumis, Gerardo G.
contents Heavily doping graphene by intercalation can raise its Fermi level near an extended van Hove singularity, potentially inducing correlated electronic phases. Intercalation also modifies the band structure: dopants may hybridize with carbon orbitals and order into $\sqrt{3}\times\sqrt{3}$ or $2\times2$ superstructures, introducing periodic potentials that fold the graphene $π$ bands. Angle-resolved photoemission spectroscopy further shows a pronounced flattening of the conduction band near the M points, producing higher-order van Hove singularities. These effects depend strongly on the dopant species and substrate, with implications for both many-body physics and transport. We construct effective tight-binding models that incorporate dopant ordering, carbon-dopant hybridization, and $π$-band renormalization. Model parameters are obtained from density functional theory and reproduce dispersions observed in photoemission experiments. Using these models, we compute the optical conductivity and identify characteristic signatures associated with dopant ordering and hybridization. Our results provide a framework to interpret experimental spectra and to probe the superlattice symmetry of highly doped monolayer graphene.
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id arxiv_https___arxiv_org_abs_2509_18098
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Electronic structure and optical signatures of highly-doped graphene
Herrera-González, Saúl Antonio
Parra-Martínez, Guillermo
Guinea, Francisco
Silva-Guillén, Jose Angel
Pantaleón, Pierre A.
Naumis, Gerardo G.
Mesoscale and Nanoscale Physics
Heavily doping graphene by intercalation can raise its Fermi level near an extended van Hove singularity, potentially inducing correlated electronic phases. Intercalation also modifies the band structure: dopants may hybridize with carbon orbitals and order into $\sqrt{3}\times\sqrt{3}$ or $2\times2$ superstructures, introducing periodic potentials that fold the graphene $π$ bands. Angle-resolved photoemission spectroscopy further shows a pronounced flattening of the conduction band near the M points, producing higher-order van Hove singularities. These effects depend strongly on the dopant species and substrate, with implications for both many-body physics and transport. We construct effective tight-binding models that incorporate dopant ordering, carbon-dopant hybridization, and $π$-band renormalization. Model parameters are obtained from density functional theory and reproduce dispersions observed in photoemission experiments. Using these models, we compute the optical conductivity and identify characteristic signatures associated with dopant ordering and hybridization. Our results provide a framework to interpret experimental spectra and to probe the superlattice symmetry of highly doped monolayer graphene.
title Electronic structure and optical signatures of highly-doped graphene
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2509.18098