Quaternary crystals CdZnTeSe: Growth via the vertical Bridgman method with different compositions of raw materials
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2025
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866915564100780032 |
|---|---|
| author | Naydenov, S. V. Kapustnyk, O. K. Pritula, I. M. Sofronov, D. S. Terzin, I. S. Kovalenko, N. O. |
| author_facet | Naydenov, S. V. Kapustnyk, O. K. Pritula, I. M. Sofronov, D. S. Terzin, I. S. Kovalenko, N. O. |
| contents | Indium-doped semiconductor crystals CdZnTeSe with several different compositions of raw materials were grown via the vertical Bridgman method under high-pressure argon. For the first time, these crystals were obtained via a combined method from a mixture of simple and binary starting components. A theoretical analysis of the permissible reactions for obtaining multicomponent CdZnTeSe crystals from different compositions of starting materials was performed. The homogeneity of the distribution of the atomic composition and electrical resistance (in the dark and under illumination) of the obtained crystals was studied. Crystals grown via the new combined method presented the best homogeneity of composition and electrophysical properties. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_18634 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Quaternary crystals CdZnTeSe: Growth via the vertical Bridgman method with different compositions of raw materials Naydenov, S. V. Kapustnyk, O. K. Pritula, I. M. Sofronov, D. S. Terzin, I. S. Kovalenko, N. O. Materials Science Applied Physics Indium-doped semiconductor crystals CdZnTeSe with several different compositions of raw materials were grown via the vertical Bridgman method under high-pressure argon. For the first time, these crystals were obtained via a combined method from a mixture of simple and binary starting components. A theoretical analysis of the permissible reactions for obtaining multicomponent CdZnTeSe crystals from different compositions of starting materials was performed. The homogeneity of the distribution of the atomic composition and electrical resistance (in the dark and under illumination) of the obtained crystals was studied. Crystals grown via the new combined method presented the best homogeneity of composition and electrophysical properties. |
| title | Quaternary crystals CdZnTeSe: Growth via the vertical Bridgman method with different compositions of raw materials |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2509.18634 |