Salvato in:
| Autori principali: | , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2025
|
| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2509.19155 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866914052413849600 |
|---|---|
| author | Kos, Dean Mas-Torrent, Marta |
| author_facet | Kos, Dean Mas-Torrent, Marta |
| contents | We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer characteristics, we observe persistent, localised shifts in transistor turn-on voltage correlated with illumination dose and position, with negligible impact on field-effect mobility. The effect is strongest 5-10 um from the source electrode and requires a drain-to-source scan direction with sub-10 um step size. Kelvin probe force microscopy confirms trapped negative charges along the scan path, consistent with exciton dissociation and electron trapping near the semiconductor-dielectric interface. The phenomenon is reproducible across multiple device geometries and organic semiconductors, including TMTES-pentacene, TIPS-pentacene, and diF-TES-ADT. These findings enable direct mapping of trap distributions and suggest new strategies for trap engineering, threshold voltage tuning, and development of organic optoelectronic memories. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_19155 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Optical probing of charge traps in organic field-effect transistors Kos, Dean Mas-Torrent, Marta Materials Science We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer characteristics, we observe persistent, localised shifts in transistor turn-on voltage correlated with illumination dose and position, with negligible impact on field-effect mobility. The effect is strongest 5-10 um from the source electrode and requires a drain-to-source scan direction with sub-10 um step size. Kelvin probe force microscopy confirms trapped negative charges along the scan path, consistent with exciton dissociation and electron trapping near the semiconductor-dielectric interface. The phenomenon is reproducible across multiple device geometries and organic semiconductors, including TMTES-pentacene, TIPS-pentacene, and diF-TES-ADT. These findings enable direct mapping of trap distributions and suggest new strategies for trap engineering, threshold voltage tuning, and development of organic optoelectronic memories. |
| title | Optical probing of charge traps in organic field-effect transistors |
| topic | Materials Science |
| url | https://arxiv.org/abs/2509.19155 |