A follow-up on the sulphur atom popping model for MoS$_2$ memristor
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , |
|---|---|
| Format: | Preprint |
| Publié: |
2025
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866914109224648704 |
|---|---|
| author | Mitra, Sanchali Mahapatra, Santanu |
| author_facet | Mitra, Sanchali Mahapatra, Santanu |
| contents | The mechanism of resistive switching in two-dimensional (2D) semiconductor-based memristors is intriguing, and our conventional knowledge of bulk-oxide based memristors does not apply to these devices. Experimental data indicate that the genesis of resistive switching may be intrinsic to the 2D semiconducting active layer, as well as resulting from the movement of electrode atoms. Employing reactive-force field (ReaxFF) molecular dynamics simulations, we introduced the "sulphur atom popping model" [npj 2D Mater. Appl. 5, 33 (2021)] to elucidate the intrinsic nature of non-volatile resistive switching in 2D molybdenum disulfide-based memristors. In this paper we provide additional perspective to this model using density functional theory. We also discuss the limitations of universal machine learning interatomic potentials in reproducing ReaxFF simulation results. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_20179 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | A follow-up on the sulphur atom popping model for MoS$_2$ memristor Mitra, Sanchali Mahapatra, Santanu Materials Science Computational Physics The mechanism of resistive switching in two-dimensional (2D) semiconductor-based memristors is intriguing, and our conventional knowledge of bulk-oxide based memristors does not apply to these devices. Experimental data indicate that the genesis of resistive switching may be intrinsic to the 2D semiconducting active layer, as well as resulting from the movement of electrode atoms. Employing reactive-force field (ReaxFF) molecular dynamics simulations, we introduced the "sulphur atom popping model" [npj 2D Mater. Appl. 5, 33 (2021)] to elucidate the intrinsic nature of non-volatile resistive switching in 2D molybdenum disulfide-based memristors. In this paper we provide additional perspective to this model using density functional theory. We also discuss the limitations of universal machine learning interatomic potentials in reproducing ReaxFF simulation results. |
| title | A follow-up on the sulphur atom popping model for MoS$_2$ memristor |
| topic | Materials Science Computational Physics |
| url | https://arxiv.org/abs/2509.20179 |