Defect-Charge-Driven 90° Switching in HfO2
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866909805815267328 |
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| author | Xie, Muting Yu, Hongyu Dai, Zhihao Wei, Yingfen Xu, Changsong Xiang, Hongjun |
| author_facet | Xie, Muting Yu, Hongyu Dai, Zhihao Wei, Yingfen Xu, Changsong Xiang, Hongjun |
| contents | Hafnium dioxide (HfO2) is a CMOS-compatible ferroelectric showing both 180° and 90° switching, yet the microscopic nature of the 90° pathway remains unresolved. We show that the 90° rotation pathway, negligible in pristine HfO2, becomes dominant under E// [111] when induced by charged oxygen vacancies. This pathway is more fatigue-resistant than the 180° reversal pathway, while delivering the same polarization change along [111] (2Pr=60 μC/cm^2 ). This charge-driven switching arises from two factors: the crystal geometry of HfO2 and the intrinsic nature of rotational pathways, the latter suggesting a possible general tendency for defect charge to bias rotation over reversal in ferroelectrics. Together these findings reveal a pathway-level origin of fatigue resistance and establish defect charge as a general control parameter for polarization dynamics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_20828 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Defect-Charge-Driven 90° Switching in HfO2 Xie, Muting Yu, Hongyu Dai, Zhihao Wei, Yingfen Xu, Changsong Xiang, Hongjun Materials Science Hafnium dioxide (HfO2) is a CMOS-compatible ferroelectric showing both 180° and 90° switching, yet the microscopic nature of the 90° pathway remains unresolved. We show that the 90° rotation pathway, negligible in pristine HfO2, becomes dominant under E// [111] when induced by charged oxygen vacancies. This pathway is more fatigue-resistant than the 180° reversal pathway, while delivering the same polarization change along [111] (2Pr=60 μC/cm^2 ). This charge-driven switching arises from two factors: the crystal geometry of HfO2 and the intrinsic nature of rotational pathways, the latter suggesting a possible general tendency for defect charge to bias rotation over reversal in ferroelectrics. Together these findings reveal a pathway-level origin of fatigue resistance and establish defect charge as a general control parameter for polarization dynamics. |
| title | Defect-Charge-Driven 90° Switching in HfO2 |
| topic | Materials Science |
| url | https://arxiv.org/abs/2509.20828 |