Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2025
|
| Schlagworte: | |
| Online-Zugang: | https://arxiv.org/abs/2509.21510 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866915514622672896 |
|---|---|
| author | Levytskyi, Volodymyr Burkhardt, Ulrich König, Markus Hennig, Christoph Svanidze, Eteri Grin, Yuri Gumeniuk, Roman |
| author_facet | Levytskyi, Volodymyr Burkhardt, Ulrich König, Markus Hennig, Christoph Svanidze, Eteri Grin, Yuri Gumeniuk, Roman |
| contents | Chirality in quantum materials is a topic of significant importance due to its profound effects on the electronic, magnetic, and optical properties of these systems. However, it is non-trivial to decouple the behavior of two enantiomorphs within the same material -- perhaps explaining why the influence of chirality on electrical properties has remained largely unexplored. In this work, we examine the electrical conductivity, magnetoresistance, and thermal expansion coefficient of LaRhC$_{2}$ -- a compound with a chiral crystal structure (tetragonal symmetry, space groups $\textit{P}$4$_{1}$ or $\textit{P}$4$_{3}$). The identification of a suitable monochiral domain was achieved via electron backscatter diffraction, which simultaneously determines crystallographic orientation and handedness. Both enantiomorphs are confirmed by single-crystal X-ray diffraction on monochiral specimens. The analysis of electrical resistivity was made possible through the single-domain extraction of enantiopure specimens from a polycrystalline sample using focused ion beam techniques. We establish that LaRhC$_{2}$ is a semiconductor with band gaps of approximately 20 meV and 33 meV parallel and perpendicular to the fourfold screw axis of the crystal structure, respectively -- consistent with band structure calculations. A significant anisotropy is also observed in the thermal expansion, electrical resistivity as well as angular-dependent magnetoresistance parallel and perpendicular o [001] crystallographic directions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_21510 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Anisotropy of the chiral, semiconducting phase LaRhC$_{2}$: a handedness resolved study Levytskyi, Volodymyr Burkhardt, Ulrich König, Markus Hennig, Christoph Svanidze, Eteri Grin, Yuri Gumeniuk, Roman Materials Science Chirality in quantum materials is a topic of significant importance due to its profound effects on the electronic, magnetic, and optical properties of these systems. However, it is non-trivial to decouple the behavior of two enantiomorphs within the same material -- perhaps explaining why the influence of chirality on electrical properties has remained largely unexplored. In this work, we examine the electrical conductivity, magnetoresistance, and thermal expansion coefficient of LaRhC$_{2}$ -- a compound with a chiral crystal structure (tetragonal symmetry, space groups $\textit{P}$4$_{1}$ or $\textit{P}$4$_{3}$). The identification of a suitable monochiral domain was achieved via electron backscatter diffraction, which simultaneously determines crystallographic orientation and handedness. Both enantiomorphs are confirmed by single-crystal X-ray diffraction on monochiral specimens. The analysis of electrical resistivity was made possible through the single-domain extraction of enantiopure specimens from a polycrystalline sample using focused ion beam techniques. We establish that LaRhC$_{2}$ is a semiconductor with band gaps of approximately 20 meV and 33 meV parallel and perpendicular to the fourfold screw axis of the crystal structure, respectively -- consistent with band structure calculations. A significant anisotropy is also observed in the thermal expansion, electrical resistivity as well as angular-dependent magnetoresistance parallel and perpendicular o [001] crystallographic directions. |
| title | Anisotropy of the chiral, semiconducting phase LaRhC$_{2}$: a handedness resolved study |
| topic | Materials Science |
| url | https://arxiv.org/abs/2509.21510 |