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| Main Authors: | , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2509.21759 |
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| _version_ | 1866915514958217216 |
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| author | Iwasaki, Takuya Morita, Yoshifumi |
| author_facet | Iwasaki, Takuya Morita, Yoshifumi |
| contents | We review the fabrication and transport characterization of hexagonal boron nitride (hBN)/Bernal bilayer graphene (BLG) moiré superlattices. Due to the moiré effect, the hBN/BLG moiré superlattices exhibit an energy gap at the charge neutrality point (CNP) even in the absence of a perpendicular electric field. In BLG, the application of a perpendicular electric field tunes the energy gap at the CNP, which contrasts with single-layer graphene and is similar to the family of rhombohedral multilayer graphene. The hBN/BLG moiré superlattice is associated with non-trivial energy-band topology and a narrow energy band featuring a van Hove singularity. By employing a dual-gated device structure where both the perpendicular displacement field and the carrier density are individually controllable, systematic engineering of the energy-band structure can be achieved. The data presented here demonstrate the universality and diversity in the physics of hBN/BLG moiré superlattices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_21759 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Hexagonal boron nitride/bilayer graphene moiré superlattices in the Dirac-material family: energy-band engineering and carrier doping by dual gating Iwasaki, Takuya Morita, Yoshifumi Mesoscale and Nanoscale Physics We review the fabrication and transport characterization of hexagonal boron nitride (hBN)/Bernal bilayer graphene (BLG) moiré superlattices. Due to the moiré effect, the hBN/BLG moiré superlattices exhibit an energy gap at the charge neutrality point (CNP) even in the absence of a perpendicular electric field. In BLG, the application of a perpendicular electric field tunes the energy gap at the CNP, which contrasts with single-layer graphene and is similar to the family of rhombohedral multilayer graphene. The hBN/BLG moiré superlattice is associated with non-trivial energy-band topology and a narrow energy band featuring a van Hove singularity. By employing a dual-gated device structure where both the perpendicular displacement field and the carrier density are individually controllable, systematic engineering of the energy-band structure can be achieved. The data presented here demonstrate the universality and diversity in the physics of hBN/BLG moiré superlattices. |
| title | Hexagonal boron nitride/bilayer graphene moiré superlattices in the Dirac-material family: energy-band engineering and carrier doping by dual gating |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2509.21759 |