2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width

Documenti analoghi

• NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
  di: Liu, Yizheng, et al.
  Pubblicazione: (2024)
• VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2
  di: Liu, Yizheng, et al.
  Pubblicazione: (2026)
• Kilovolt-Class $β-Ga_2O_3$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $10^{15}$ $cm^{-3}$ Doped Drift Layers
  di: Peterson, Carl, et al.
  Pubblicazione: (2025)
• Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
  di: Liu, Yizheng, et al.
  Pubblicazione: (2025)
• Evidence of Micron-Scale Ion Damage in (010), (110), and (011) $β-Ga_2O_3$ Epitaxial Layers
  di: Peterson, Carl, et al.
  Pubblicazione: (2026)