2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width
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2025
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| author | Saha, Chinmoy Nath Roy, Saurav Liu, Yizheng Peterson, Carl Krishnamoorthy, Sriram |
| author_facet | Saha, Chinmoy Nath Roy, Saurav Liu, Yizheng Peterson, Carl Krishnamoorthy, Sriram |
| contents | In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron dimensions. We used a nanolaminate dielectric comprising a stack of multiple thin TiO2 and Al2O3 layers as RESURF dielectric and for field plate edge termination. Both Wfin of 200 nm and 500 nm demonstrate excellent on-state performance with specific on-resistance (Ron,sp) of 9.8-12 mohmcm2, and 10^10 rectification ratio. A self-aligned photoresist planarization and etch-back process was employed to expose the top of the fins for Schottky contact formation, eliminating critical lithographic alignment challenges in sub-micron scale processing. We achieved a breakdown of 2.34 kV with very low leakage currents before catastrophic breakdown. The measured breakdown voltage is limited by dielectric breakdown at the trench bottom corner as verified by metal-oxide-semiconductor (MOS) test structure. TCAD simulation shows a reduced electric field at the surface of the metal-semiconductor junction due to the RESURF effect, resulting in very low reverse leakage before breakdown. The parallel plane electric field in the \b{eta} -Ga2O3 is extracted to be 3.8 MV/cm from TCAD simulations using accurately extracted drift layer doping profile from high voltage CV measurements. A power figure of merit of 0.867 GW/cm2(0.56 GW/cm2 with current spreading) was calculated. Enhanced RESURF by integration of high-k dielectrics with self-aligned photoresist planarization, offers a promising pathway towards high figure of merit, low leakage high-performance vertical devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_21857 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | 2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width Saha, Chinmoy Nath Roy, Saurav Liu, Yizheng Peterson, Carl Krishnamoorthy, Sriram Applied Physics In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron dimensions. We used a nanolaminate dielectric comprising a stack of multiple thin TiO2 and Al2O3 layers as RESURF dielectric and for field plate edge termination. Both Wfin of 200 nm and 500 nm demonstrate excellent on-state performance with specific on-resistance (Ron,sp) of 9.8-12 mohmcm2, and 10^10 rectification ratio. A self-aligned photoresist planarization and etch-back process was employed to expose the top of the fins for Schottky contact formation, eliminating critical lithographic alignment challenges in sub-micron scale processing. We achieved a breakdown of 2.34 kV with very low leakage currents before catastrophic breakdown. The measured breakdown voltage is limited by dielectric breakdown at the trench bottom corner as verified by metal-oxide-semiconductor (MOS) test structure. TCAD simulation shows a reduced electric field at the surface of the metal-semiconductor junction due to the RESURF effect, resulting in very low reverse leakage before breakdown. The parallel plane electric field in the \b{eta} -Ga2O3 is extracted to be 3.8 MV/cm from TCAD simulations using accurately extracted drift layer doping profile from high voltage CV measurements. A power figure of merit of 0.867 GW/cm2(0.56 GW/cm2 with current spreading) was calculated. Enhanced RESURF by integration of high-k dielectrics with self-aligned photoresist planarization, offers a promising pathway towards high figure of merit, low leakage high-performance vertical devices. |
| title | 2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2509.21857 |