2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width
Fuente:
arXiv
Saved in:
| Main Authors: | Saha, Chinmoy Nath, Roy, Saurav, Liu, Yizheng, Peterson, Carl, Krishnamoorthy, Sriram |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
by: Liu, Yizheng, et al.
Published: (2024)
by: Liu, Yizheng, et al.
Published: (2024)
VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2
by: Liu, Yizheng, et al.
Published: (2026)
by: Liu, Yizheng, et al.
Published: (2026)
Kilovolt-Class $β-Ga_2O_3$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $10^{15}$ $cm^{-3}$ Doped Drift Layers
by: Peterson, Carl, et al.
Published: (2025)
by: Peterson, Carl, et al.
Published: (2025)
Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
by: Liu, Yizheng, et al.
Published: (2025)
by: Liu, Yizheng, et al.
Published: (2025)
Evidence of Micron-Scale Ion Damage in (010), (110), and (011) $β-Ga_2O_3$ Epitaxial Layers
by: Peterson, Carl, et al.
Published: (2026)
by: Peterson, Carl, et al.
Published: (2026)
Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
by: Liu, Yizheng, et al.
Published: (2025)
by: Liu, Yizheng, et al.
Published: (2025)
Realization of Insulating Buffer Layers via MOCVD-Grown Nitrogen-Doped (010) \b{eta}-Ga2O3
by: Kahler, Rachel, et al.
Published: (2025)
by: Kahler, Rachel, et al.
Published: (2025)
Orientation-Dependent \b{eta}-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO
by: Liu, Yizheng, et al.
Published: (2025)
by: Liu, Yizheng, et al.
Published: (2025)
Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $β$-Ga$_2$O$_3$
by: Roy, Saurav, et al.
Published: (2024)
by: Roy, Saurav, et al.
Published: (2024)
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
by: Liu, Yizheng, et al.
Published: (2025)
by: Liu, Yizheng, et al.
Published: (2025)
Degradation of 2.4-kV $Ga_{2}O_{3}$ Schottky Barrier Diode at High Temperatures up to 500 °C
by: Ellis, Hunter, et al.
Published: (2025)
by: Ellis, Hunter, et al.
Published: (2025)
Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension
by: Gilankar, Advait, et al.
Published: (2025)
by: Gilankar, Advait, et al.
Published: (2025)
Over 3 kV and Ultra-Low leakage Vertical (011) \b{eta}-Ga2O3 Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate
by: Hollar, Emerson J., et al.
Published: (2025)
by: Hollar, Emerson J., et al.
Published: (2025)
Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers
by: Peterson, Carl, et al.
Published: (2024)
by: Peterson, Carl, et al.
Published: (2024)
Optimized Beveled–Mesa–Trench Composite Structure for Advanced Schottky Barrier Diodes
by: Pingfan Ning, et al.
Published: (2026)
by: Pingfan Ning, et al.
Published: (2026)
Beta-AlGaO/Ga2O3 Tri-Gate MOSHEMT with 70GHz fT and 55GHz fmax
by: Nipu, Noor Jahan, et al.
Published: (2026)
by: Nipu, Noor Jahan, et al.
Published: (2026)
High performance vacuum annealed beta-(AlxGa1-x)2O3/Ga2O3 HFET with f_T/f_MAX of 32/65 GHz
by: Saha, Chinmoy Nath, et al.
Published: (2025)
by: Saha, Chinmoy Nath, et al.
Published: (2025)
Vertical Schottky Barrier Diode with Multilevel Stepped Field Plates
by: Pingfan Ning, et al.
Published: (2025)
by: Pingfan Ning, et al.
Published: (2025)
Radiation Resilience of $β$-Ga$_2$O$_3$ Schottky Barrier Diodes Under High Dose Gamma Radiation
by: Khan, Saleh Ahmed, et al.
Published: (2024)
by: Khan, Saleh Ahmed, et al.
Published: (2024)
Measurement of Free-Carrier Density in a 1.2 kV SiC Schottky Diode under Overstress Conditions
by: Bonet Isidro, Ferran, et al.
Published: (2025)
by: Bonet Isidro, Ferran, et al.
Published: (2025)
Quasi‐Vertical Diamond Schottky Barrier Diode With Sidewall‐Enhanced n‐Ga2O3/p‐Diamond Junction Termination Extension
by: Chengwei Dong, et al.
Published: (2025)
by: Chengwei Dong, et al.
Published: (2025)
Neutron-Assisted Breakdown Enhancement in $β$-Ga$_2$O$_3$ Schottky Diodes
by: Khan, Saleh Ahmed, et al.
Published: (2025)
by: Khan, Saleh Ahmed, et al.
Published: (2025)
GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices
by: Frank Brunner, et al.
Published: (2024)
by: Frank Brunner, et al.
Published: (2024)
Electro-thermal Co-design of Vertical \b{eta}-Ga2O3 Schottky Diodes with High-permittivity BaTiO3 Field-plate for High-field and Thermal Management
by: Audri, Ahsanul Mohaimeen, et al.
Published: (2025)
by: Audri, Ahsanul Mohaimeen, et al.
Published: (2025)
Design Strategy of Vertical GaN Power Schottky Barrier Diodes with p‐GaN Junction Termination Extension and Experimental Demonstration of Selective p‐Doping by Implantation
by: Hang Chen, et al.
Published: (2024)
by: Hang Chen, et al.
Published: (2024)
Quasi-Vertical $β$-Ga$_2$O$_3$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching
by: Khan, Saleh Ahmed, et al.
Published: (2025)
by: Khan, Saleh Ahmed, et al.
Published: (2025)
1.5 kV NiO/Ga 2 O 3 Vertical Heterojunction Diodes Based on Lightly Doped Single‐Crystal Substrate with In Situ Ohmic Contact Formation
by: Chang Liu, et al.
Published: (2025)
by: Chang Liu, et al.
Published: (2025)
RESURF Ga$_{2}$O$_{3}$-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage
by: Chen, Junting, et al.
Published: (2024)
by: Chen, Junting, et al.
Published: (2024)
Schottky Barrier Diodes Based on Freestanding Polycrystalline Diamond Membranes
by: Dmitry Shinyavskiy, et al.
Published: (2025)
by: Dmitry Shinyavskiy, et al.
Published: (2025)
Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3
by: Rock, Nathan D., et al.
Published: (2024)
by: Rock, Nathan D., et al.
Published: (2024)
Record Performance in Vertically Stacked, Solution‐Processed ZTO Schottky Diodes
by: Carlos Silva, et al.
Published: (2026)
by: Carlos Silva, et al.
Published: (2026)
>3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on
by: Gilankar, Advait, et al.
Published: (2024)
by: Gilankar, Advait, et al.
Published: (2024)
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
by: Alam, Md Tahmidul, et al.
Published: (2024)
by: Alam, Md Tahmidul, et al.
Published: (2024)
Voltage and Current Characteristics of Schottky Barrier Diodes and Rectifier Diodes Exposed to Standard Lightning Impulse Voltage
by: Tin Zar Win Ko, et al.
Published: (2024)
by: Tin Zar Win Ko, et al.
Published: (2024)
Versatile Contact Engineering on β‐Ga2O3 Using EGaIn for Schottky Diodes and MESFET Applications
by: Gyeong Seop Kim, et al.
Published: (2025)
by: Gyeong Seop Kim, et al.
Published: (2025)
Investigation and Reduction of Surface Damage of Etched Quasi‐Vertical Gallium Nitride Schottky Diodes
by: Qi Shu, et al.
Published: (2025)
by: Qi Shu, et al.
Published: (2025)
Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure
by: Nyabere, Geofrey, et al.
Published: (2025)
by: Nyabere, Geofrey, et al.
Published: (2025)
Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
by: Maciej Kamiński, et al.
Published: (2024)
by: Maciej Kamiński, et al.
Published: (2024)
Compact Dual-Polarization Schottky Barrier Diode Receivers for Submillimeter Wave Remote Sensing
by: Auriacombe, Olivier, et al.
Published: (2026)
by: Auriacombe, Olivier, et al.
Published: (2026)
Extreme Bandgap Al 0.63 Ga 0.37 N Quasivertical Schottky Barrier Diodes with a High Baliga Figure of Merit of 630 MW cm −2
by: Abdullah Al Mamun Mazumder, et al.
Published: (2025)
by: Abdullah Al Mamun Mazumder, et al.
Published: (2025)
Similar Items
-
NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
by: Liu, Yizheng, et al.
Published: (2024) -
VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2
by: Liu, Yizheng, et al.
Published: (2026) -
Kilovolt-Class $β-Ga_2O_3$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $10^{15}$ $cm^{-3}$ Doped Drift Layers
by: Peterson, Carl, et al.
Published: (2025) -
Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
by: Liu, Yizheng, et al.
Published: (2025) -
Evidence of Micron-Scale Ion Damage in (010), (110), and (011) $β-Ga_2O_3$ Epitaxial Layers
by: Peterson, Carl, et al.
Published: (2026)