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Main Authors: Wang, Zhien, Wang, Jiangtao, Exposito, Diego, Krayev, Andrey, He, Shih-Ming, Zheng, Xudong, Hennighausen, Zachariah, Brihuega, Ivan, Jeong, Se-Young, Kong, Jing
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2509.21908
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author Wang, Zhien
Wang, Jiangtao
Exposito, Diego
Krayev, Andrey
He, Shih-Ming
Zheng, Xudong
Hennighausen, Zachariah
Brihuega, Ivan
Jeong, Se-Young
Kong, Jing
author_facet Wang, Zhien
Wang, Jiangtao
Exposito, Diego
Krayev, Andrey
He, Shih-Ming
Zheng, Xudong
Hennighausen, Zachariah
Brihuega, Ivan
Jeong, Se-Young
Kong, Jing
contents Single-orientation stitching of graphene has emerged as the predominant method for growth of large-area, high-quality graphene films. Particularly noteworthy is graphene grown on single-crystalline Cu(111)/sapphire substrates, which exhibits exceptionally planar oriented stitching due to the atomically smooth substrate, facilitating the formation of continuous, high-quality graphene monolayer. These single-orientation stitches have conventionally been regarded as seamless with negligible defect concentrations. In this report, we present experimental observations regarding graphene grown on single-crystalline Cu(111)/sapphire substrates. Among the graphene flakes with single-orientation, our findings reveal two major merging behaviors: one producing the expected seamless stitching, and another unexpectedly generating structural defects that create nanoscale pathways permitting water permeation. Notably, we identify a unique merging structure--overlapped junction, in which the edge of one graphene flake overlaps and lies atop the edge of another flake, rather than forming a continuous atomic stitch. This discovery challenges the conventional anticipation of single-orientation stitched graphene films as seamless single crystalline film, while offers unique perspective for graphene applications in molecular sieving, selective filtration membranes, and protective coatings.
format Preprint
id arxiv_https___arxiv_org_abs_2509_21908
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Beyond Seamless: Unexpected Defective Merging in Single-Orientation Graphene
Wang, Zhien
Wang, Jiangtao
Exposito, Diego
Krayev, Andrey
He, Shih-Ming
Zheng, Xudong
Hennighausen, Zachariah
Brihuega, Ivan
Jeong, Se-Young
Kong, Jing
Materials Science
Single-orientation stitching of graphene has emerged as the predominant method for growth of large-area, high-quality graphene films. Particularly noteworthy is graphene grown on single-crystalline Cu(111)/sapphire substrates, which exhibits exceptionally planar oriented stitching due to the atomically smooth substrate, facilitating the formation of continuous, high-quality graphene monolayer. These single-orientation stitches have conventionally been regarded as seamless with negligible defect concentrations. In this report, we present experimental observations regarding graphene grown on single-crystalline Cu(111)/sapphire substrates. Among the graphene flakes with single-orientation, our findings reveal two major merging behaviors: one producing the expected seamless stitching, and another unexpectedly generating structural defects that create nanoscale pathways permitting water permeation. Notably, we identify a unique merging structure--overlapped junction, in which the edge of one graphene flake overlaps and lies atop the edge of another flake, rather than forming a continuous atomic stitch. This discovery challenges the conventional anticipation of single-orientation stitched graphene films as seamless single crystalline film, while offers unique perspective for graphene applications in molecular sieving, selective filtration membranes, and protective coatings.
title Beyond Seamless: Unexpected Defective Merging in Single-Orientation Graphene
topic Materials Science
url https://arxiv.org/abs/2509.21908