Carrier-phonon decoupling via annealing enhances thermoelectric performance of Bi2(Te,Se)3
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arXiv
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| Autores principales: | , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866909808654811136 |
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| author | Cheng, Xinxiu Xu, Liqing Gao, Zhibin Liu, Wei Yin, Zhanxiang Ding, Xiangdong Xiao, Yu |
| author_facet | Cheng, Xinxiu Xu, Liqing Gao, Zhibin Liu, Wei Yin, Zhanxiang Ding, Xiangdong Xiao, Yu |
| contents | Thermoelectric cooling based on the Peltier effect requires high-performance materials near room temperature. In this work, Bi2Te2.6Se0.4 synthesized by melting-hot pressing followed by 100 h annealing (MT-HP-AN) at 723 K exhibits markedly improved performance. Annealing introduces cation vacancies via Te(Se) volatilization, lowering carrier density and enhancing mobility, while simultaneously increasing phonon scattering. A peak ZT of 1.06 at 373 K and an average ZT of 0.99 at 300-423 K are achieved. This MT-HP-AN approach offers a simple yet effective strategy to decouple carrier and phonon transport, advancing the potential of n-type BTS for thermo-electric cooling applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_21977 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Carrier-phonon decoupling via annealing enhances thermoelectric performance of Bi2(Te,Se)3 Cheng, Xinxiu Xu, Liqing Gao, Zhibin Liu, Wei Yin, Zhanxiang Ding, Xiangdong Xiao, Yu Materials Science High Energy Physics - Experiment Thermoelectric cooling based on the Peltier effect requires high-performance materials near room temperature. In this work, Bi2Te2.6Se0.4 synthesized by melting-hot pressing followed by 100 h annealing (MT-HP-AN) at 723 K exhibits markedly improved performance. Annealing introduces cation vacancies via Te(Se) volatilization, lowering carrier density and enhancing mobility, while simultaneously increasing phonon scattering. A peak ZT of 1.06 at 373 K and an average ZT of 0.99 at 300-423 K are achieved. This MT-HP-AN approach offers a simple yet effective strategy to decouple carrier and phonon transport, advancing the potential of n-type BTS for thermo-electric cooling applications. |
| title | Carrier-phonon decoupling via annealing enhances thermoelectric performance of Bi2(Te,Se)3 |
| topic | Materials Science High Energy Physics - Experiment |
| url | https://arxiv.org/abs/2509.21977 |