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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2509.22185 |
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| _version_ | 1866911233412694016 |
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| author | Meyer, Manuel Baumbach, Jonas Krishtopenko, Sergey Wolf, Adriana Emmerling, Monika Schmid, Sebastian Kamp, Martin Jouault, Benoit Rodriguez, Jean-Baptiste Tournie, Eric Müller, Tobias Thomale, Ronny Bastard, Gerald Teppe, Frederic Hartmann, Fabian Höfling, Sven |
| author_facet | Meyer, Manuel Baumbach, Jonas Krishtopenko, Sergey Wolf, Adriana Emmerling, Monika Schmid, Sebastian Kamp, Martin Jouault, Benoit Rodriguez, Jean-Baptiste Tournie, Eric Müller, Tobias Thomale, Ronny Bastard, Gerald Teppe, Frederic Hartmann, Fabian Höfling, Sven |
| contents | The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability, low-temperature operation, and the lack of robust electronic transport have hindered practical implementations. Here, we demonstrate the QSHE in an InAs/GaInSb/InAs trilayer quantum well structure operating at elevated temperatures. This platform meets key criteria for device integration, including scalability, reproducibility, and tunability via electric field. When the Fermi level is positioned within the energy gap, we observe quantized resistance values independent of device length and in both local and nonlocal measurement configurations, confirming the QSHE. Helical edge transport remains stable up to T = 60 K, with further potential for higher-temperature operation. Our findings establish the InAs/GaInSb system as a promising candidate for integration into next-generation devices harnessing topological functionalities, advancing the development of topological electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_22185 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics Meyer, Manuel Baumbach, Jonas Krishtopenko, Sergey Wolf, Adriana Emmerling, Monika Schmid, Sebastian Kamp, Martin Jouault, Benoit Rodriguez, Jean-Baptiste Tournie, Eric Müller, Tobias Thomale, Ronny Bastard, Gerald Teppe, Frederic Hartmann, Fabian Höfling, Sven Mesoscale and Nanoscale Physics The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability, low-temperature operation, and the lack of robust electronic transport have hindered practical implementations. Here, we demonstrate the QSHE in an InAs/GaInSb/InAs trilayer quantum well structure operating at elevated temperatures. This platform meets key criteria for device integration, including scalability, reproducibility, and tunability via electric field. When the Fermi level is positioned within the energy gap, we observe quantized resistance values independent of device length and in both local and nonlocal measurement configurations, confirming the QSHE. Helical edge transport remains stable up to T = 60 K, with further potential for higher-temperature operation. Our findings establish the InAs/GaInSb system as a promising candidate for integration into next-generation devices harnessing topological functionalities, advancing the development of topological electronics. |
| title | Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2509.22185 |