Robust quantum Hall resistance standard from uniform wafer-scale epitaxial graphene on SiC
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866912927301238784 |
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| author | Couëdo, François Mastropasqua, Chiara Theret, Aurélien Mailly, Dominique Michon, Adrien Taupin, Mathieu |
| author_facet | Couëdo, François Mastropasqua, Chiara Theret, Aurélien Mailly, Dominique Michon, Adrien Taupin, Mathieu |
| contents | We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular doping, we achieve a low carrier density regime ($n_\mathrm s < $ 1.5 \textperiodcentered 10$^{11}$ cm$^{-2}$) combined with high mobility ($\upmu \geq$ 6000 cm$^2$ V$^{-1}$ s$^{-1}$) at low temperature. Accurate quantization of the Hall resistance is demonstrated at magnetic flux densities as low as 3.5 T, temperatures up to 8 K, and measurement currents up to 325 $\upmu$A, with relative measurement uncertainties of a few parts per billion. A stability diagram mapping dissipation as a function of temperature and current provides insight into optimal doping conditions that maximize the breakdown current. All measurements were carried out in a pulse-tube-based cryomagnetic system, enabling simplified and continuous operation of the quantum Hall resistance standard without liquid helium consumption. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2509_22882 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Robust quantum Hall resistance standard from uniform wafer-scale epitaxial graphene on SiC Couëdo, François Mastropasqua, Chiara Theret, Aurélien Mailly, Dominique Michon, Adrien Taupin, Mathieu Mesoscale and Nanoscale Physics Applied Physics We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular doping, we achieve a low carrier density regime ($n_\mathrm s < $ 1.5 \textperiodcentered 10$^{11}$ cm$^{-2}$) combined with high mobility ($\upmu \geq$ 6000 cm$^2$ V$^{-1}$ s$^{-1}$) at low temperature. Accurate quantization of the Hall resistance is demonstrated at magnetic flux densities as low as 3.5 T, temperatures up to 8 K, and measurement currents up to 325 $\upmu$A, with relative measurement uncertainties of a few parts per billion. A stability diagram mapping dissipation as a function of temperature and current provides insight into optimal doping conditions that maximize the breakdown current. All measurements were carried out in a pulse-tube-based cryomagnetic system, enabling simplified and continuous operation of the quantum Hall resistance standard without liquid helium consumption. |
| title | Robust quantum Hall resistance standard from uniform wafer-scale epitaxial graphene on SiC |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2509.22882 |