Field-free superconducting diode effect of NbSe2 induced by strain
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arXiv
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| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866918149859835904 |
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| author | Li, Jiajun Zou, Minhao Guo, Fengyi Zheng, Dai Zhang, Yiying Du, Yu Zhou, Fuwei Zhang, Heng Qi, Wuyi Wang, Tianqi Yu, YeFan Wang, Rui Fei, Fucong Geng, Hao Song, Fengqi |
| author_facet | Li, Jiajun Zou, Minhao Guo, Fengyi Zheng, Dai Zhang, Yiying Du, Yu Zhou, Fuwei Zhang, Heng Qi, Wuyi Wang, Tianqi Yu, YeFan Wang, Rui Fei, Fucong Geng, Hao Song, Fengqi |
| contents | Superconducting diodes, similar to semiconductor diodes, possess unidirectional superconducting properties and are the fundamental units for constructing superconducting quantum computing, thus attracting widespread attention. At present, most of superconducting diodes require an external magnetic field or proximity effect to break time reversal symmetry (TRS). The cases of intrinsic superconducting diode effect (SDE) under zero magnetic field are relatively scarce, and there are still some puzzles especially regarding the reasons for the TRS breaking. Here, we not only report field free SDE in NbSe2 induced by strain, but also large values of the difference of Ic+ and |Ic-| (ΔIc) of 286 μA and the superconducting diode efficiency (η) of 6.76 % are achieved. Interestingly, ΔIc varies with the magnetic field and exhibits two distinct evolutionary behaviors with B-odd or B-even symmetry in various devices. We attribute this to the selective activation of two independent, spatially-orthogonal mechanisms: a stress-induced real-space polarity and a field-induced reciprocal-space asymmetric energy bands. In general, we propose an extremely effectively method to produce field free SDE, even when the material itself does not possess field free SDE, and provide new perspectives to understand the SDE which build new avenues for superconducting quantum devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_23707 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Field-free superconducting diode effect of NbSe2 induced by strain Li, Jiajun Zou, Minhao Guo, Fengyi Zheng, Dai Zhang, Yiying Du, Yu Zhou, Fuwei Zhang, Heng Qi, Wuyi Wang, Tianqi Yu, YeFan Wang, Rui Fei, Fucong Geng, Hao Song, Fengqi Materials Science Superconducting diodes, similar to semiconductor diodes, possess unidirectional superconducting properties and are the fundamental units for constructing superconducting quantum computing, thus attracting widespread attention. At present, most of superconducting diodes require an external magnetic field or proximity effect to break time reversal symmetry (TRS). The cases of intrinsic superconducting diode effect (SDE) under zero magnetic field are relatively scarce, and there are still some puzzles especially regarding the reasons for the TRS breaking. Here, we not only report field free SDE in NbSe2 induced by strain, but also large values of the difference of Ic+ and |Ic-| (ΔIc) of 286 μA and the superconducting diode efficiency (η) of 6.76 % are achieved. Interestingly, ΔIc varies with the magnetic field and exhibits two distinct evolutionary behaviors with B-odd or B-even symmetry in various devices. We attribute this to the selective activation of two independent, spatially-orthogonal mechanisms: a stress-induced real-space polarity and a field-induced reciprocal-space asymmetric energy bands. In general, we propose an extremely effectively method to produce field free SDE, even when the material itself does not possess field free SDE, and provide new perspectives to understand the SDE which build new avenues for superconducting quantum devices. |
| title | Field-free superconducting diode effect of NbSe2 induced by strain |
| topic | Materials Science |
| url | https://arxiv.org/abs/2509.23707 |