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| Format: | Preprint |
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2025
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| Online-Zugang: | https://arxiv.org/abs/2509.24451 |
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| author | Pushkarev, Anatoly P. Khmelevskaia, Daria Matchenya, Ivan A. Baryshev, Stepan A. Sannikov, Denis A. Ekgardt, Alexey A. Moiseev, Eduard I. Kryzhanovskaya, Natalia V. Zhukov, Alexey E. Krasnikov, Dmitry V. Marunchenko, Alexandr A. Yulin, Alexey V. Nasibulin, Albert G. Lagoudakis, Pavlos G. |
| author_facet | Pushkarev, Anatoly P. Khmelevskaia, Daria Matchenya, Ivan A. Baryshev, Stepan A. Sannikov, Denis A. Ekgardt, Alexey A. Moiseev, Eduard I. Kryzhanovskaya, Natalia V. Zhukov, Alexey E. Krasnikov, Dmitry V. Marunchenko, Alexandr A. Yulin, Alexey V. Nasibulin, Albert G. Lagoudakis, Pavlos G. |
| contents | Reaching lasing in electrically pumped microdevices based on solution-processed semiconductors poses a major scientific and technological challenge. Halide perovskites offer a promising platform for electrical injection, since their optically excited single-crystal cavities and predesigned or postprocessed microstructures have exhibited low lasing threshold. Indirect electrical pumping of a dual-cavity perovskite laser was recently obtained, utilizing a well-established technological concept of embedding a high-luminosity light-emitting diode (LED) with a high-gain medium into an integrated device. Direct charge-carrier injection into a perovskite LED excited by auxiliary short-, optical-pulses resulted into amplified spontaneous emission. Other efforts for rational engineering of architectures that allow for high charge-carrier density are still to demonstrate lasing. Here, we develop a novel strategy for achieving direct electrical pumping of a perovskite laser. We integrate a solution-grown CsPbBr3 microplate with chemically inert single-walled carbon nanotube electrodes and embed them into an optical microcavity. By cooling the microdevice down to 8 K at a constant current, a perovskite p-i-n diode is formed that facilitates a balanced carrier injection at high current densities. The perovskite microcavity diode operates in the strong coupling regime, exhibiting polariton lasing under a direct current of 65 uA. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_24451 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Non-epitaxial perovskite polariton laser diode operating under direct current Pushkarev, Anatoly P. Khmelevskaia, Daria Matchenya, Ivan A. Baryshev, Stepan A. Sannikov, Denis A. Ekgardt, Alexey A. Moiseev, Eduard I. Kryzhanovskaya, Natalia V. Zhukov, Alexey E. Krasnikov, Dmitry V. Marunchenko, Alexandr A. Yulin, Alexey V. Nasibulin, Albert G. Lagoudakis, Pavlos G. Optics Mesoscale and Nanoscale Physics Materials Science Reaching lasing in electrically pumped microdevices based on solution-processed semiconductors poses a major scientific and technological challenge. Halide perovskites offer a promising platform for electrical injection, since their optically excited single-crystal cavities and predesigned or postprocessed microstructures have exhibited low lasing threshold. Indirect electrical pumping of a dual-cavity perovskite laser was recently obtained, utilizing a well-established technological concept of embedding a high-luminosity light-emitting diode (LED) with a high-gain medium into an integrated device. Direct charge-carrier injection into a perovskite LED excited by auxiliary short-, optical-pulses resulted into amplified spontaneous emission. Other efforts for rational engineering of architectures that allow for high charge-carrier density are still to demonstrate lasing. Here, we develop a novel strategy for achieving direct electrical pumping of a perovskite laser. We integrate a solution-grown CsPbBr3 microplate with chemically inert single-walled carbon nanotube electrodes and embed them into an optical microcavity. By cooling the microdevice down to 8 K at a constant current, a perovskite p-i-n diode is formed that facilitates a balanced carrier injection at high current densities. The perovskite microcavity diode operates in the strong coupling regime, exhibiting polariton lasing under a direct current of 65 uA. |
| title | Non-epitaxial perovskite polariton laser diode operating under direct current |
| topic | Optics Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2509.24451 |