Dipolar excitonic quantum wires at atomically sharp lateral interfaces

Fuente: arXiv
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Main Authors: Vandoolaeghe, Elie, Fortuna, Francesco, Chakraborty, Suman Kumar, Nayak, Biswajeet, Taniguchi, Takashi, Watanabe, Kenji, Sahoo, Prasana K., Chervy, Thibault, Murthy, Puneet A.
Format: Preprint
Published: 2025
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author Vandoolaeghe, Elie
Fortuna, Francesco
Chakraborty, Suman Kumar
Nayak, Biswajeet
Taniguchi, Takashi
Watanabe, Kenji
Sahoo, Prasana K.
Chervy, Thibault
Murthy, Puneet A.
author_facet Vandoolaeghe, Elie
Fortuna, Francesco
Chakraborty, Suman Kumar
Nayak, Biswajeet
Taniguchi, Takashi
Watanabe, Kenji
Sahoo, Prasana K.
Chervy, Thibault
Murthy, Puneet A.
contents One-dimensional (1D) quantum systems are a cornerstone of many-body physics. However, their realization in solids has traditionally relied on top-down methods, which are limited by structural disorder and coarse confinement. Here, we demonstrate a fundamentally distinct route: the emergence of 1D quantum matter at the atomically sharp interface between monolayer semiconductors. Using lateral $MoSe_2-WSe_2$ heterostructures, we identify interfacial excitonic quasiparticles that are bound to the crystal junction. Photoluminescence spectroscopy resolves these excitons into a ladder of discrete states, establishing nanoscopic 1D confinement at length scales of 3 nm. These excitons possess exceptional large permanent in-plane electric dipole moments exceeding e x 2 nm, and exhibit micron-scale, highly anisotropic diffusion confined to the interface. Crucially, the lateral geometry enables dynamic, in-situ reconfiguration of the exciton's internal structure. By introducing electrostatic doping, we demonstrate a collapse of the dipole moment and a 20-fold reduction in radiative lifetime. This structural tunability establishes lateral interfaces as a uniquely powerful platform for the 'bottom-up' engineering of 1D quantum matter. By enabling the dynamic tuning of wavefunctions within a single atomic monolayer, this work opens a scalable route toward 1D excitonic circuits and strongly correlated 1D bosonic phases.
format Preprint
id arxiv_https___arxiv_org_abs_2509_24465
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Dipolar excitonic quantum wires at atomically sharp lateral interfaces
Vandoolaeghe, Elie
Fortuna, Francesco
Chakraborty, Suman Kumar
Nayak, Biswajeet
Taniguchi, Takashi
Watanabe, Kenji
Sahoo, Prasana K.
Chervy, Thibault
Murthy, Puneet A.
Mesoscale and Nanoscale Physics
One-dimensional (1D) quantum systems are a cornerstone of many-body physics. However, their realization in solids has traditionally relied on top-down methods, which are limited by structural disorder and coarse confinement. Here, we demonstrate a fundamentally distinct route: the emergence of 1D quantum matter at the atomically sharp interface between monolayer semiconductors. Using lateral $MoSe_2-WSe_2$ heterostructures, we identify interfacial excitonic quasiparticles that are bound to the crystal junction. Photoluminescence spectroscopy resolves these excitons into a ladder of discrete states, establishing nanoscopic 1D confinement at length scales of 3 nm. These excitons possess exceptional large permanent in-plane electric dipole moments exceeding e x 2 nm, and exhibit micron-scale, highly anisotropic diffusion confined to the interface. Crucially, the lateral geometry enables dynamic, in-situ reconfiguration of the exciton's internal structure. By introducing electrostatic doping, we demonstrate a collapse of the dipole moment and a 20-fold reduction in radiative lifetime. This structural tunability establishes lateral interfaces as a uniquely powerful platform for the 'bottom-up' engineering of 1D quantum matter. By enabling the dynamic tuning of wavefunctions within a single atomic monolayer, this work opens a scalable route toward 1D excitonic circuits and strongly correlated 1D bosonic phases.
title Dipolar excitonic quantum wires at atomically sharp lateral interfaces
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2509.24465