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| Hauptverfasser: | , , , , , , , , , |
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| Format: | Preprint |
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2025
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| Online-Zugang: | https://arxiv.org/abs/2509.26412 |
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| _version_ | 1866914297307725824 |
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| author | Zhang, Guangwu Xiang, Xing Qian, Ziyan Xu, Yixin Yue, Shengying Jang, Hyejin Yang, Lin Zhou, Yanguang Wang, Xinyu Zheng, Qiye |
| author_facet | Zhang, Guangwu Xiang, Xing Qian, Ziyan Xu, Yixin Yue, Shengying Jang, Hyejin Yang, Lin Zhou, Yanguang Wang, Xinyu Zheng, Qiye |
| contents | Strain gradients, ubiquitous in flexible devices and epitaxial nanostructures, are a major blind spot for thermal transport in \b{eta}-Ga2O3. We establish that strain gradient unlocks a thermal conductivity (k) suppression mechanism fundamentally more potent than uniform strain: moderate uniaxial gradients (0.6%/nm) suppress k by 32-37% (27-30%) in thin films (nanowires), intensifying to 43.3% with biaxial gradients. This reduction far exceeds that from equivalent uniform strain and surpasses benchmark materials like silicon and BAs. Critically, a surprising decoupling emerges: while 3% uniform strain alters thermal anisotropy by ~25%, strain gradient strongly suppresses k with preserving this ratio. Mechanistically, strain gradients-induced symmetry breaking and enhanced mode coupling anisotropically activate forbidden scattering channels, making gradient-driven scattering dominant over intrinsic phonon scattering below 6.25 THz. These findings redefine non-uniform strain from a parasitic flaw into a powerful design tool for engineering thermal isolation and heat flux in next-generation flexible and high-power \b{eta}-Ga2O3 electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_26412 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Strain-Gradient-Driven Decoupling of Thermal Suppression from Anisotropy in \b{eta}-Ga2O3 Zhang, Guangwu Xiang, Xing Qian, Ziyan Xu, Yixin Yue, Shengying Jang, Hyejin Yang, Lin Zhou, Yanguang Wang, Xinyu Zheng, Qiye Materials Science Atomic Physics Strain gradients, ubiquitous in flexible devices and epitaxial nanostructures, are a major blind spot for thermal transport in \b{eta}-Ga2O3. We establish that strain gradient unlocks a thermal conductivity (k) suppression mechanism fundamentally more potent than uniform strain: moderate uniaxial gradients (0.6%/nm) suppress k by 32-37% (27-30%) in thin films (nanowires), intensifying to 43.3% with biaxial gradients. This reduction far exceeds that from equivalent uniform strain and surpasses benchmark materials like silicon and BAs. Critically, a surprising decoupling emerges: while 3% uniform strain alters thermal anisotropy by ~25%, strain gradient strongly suppresses k with preserving this ratio. Mechanistically, strain gradients-induced symmetry breaking and enhanced mode coupling anisotropically activate forbidden scattering channels, making gradient-driven scattering dominant over intrinsic phonon scattering below 6.25 THz. These findings redefine non-uniform strain from a parasitic flaw into a powerful design tool for engineering thermal isolation and heat flux in next-generation flexible and high-power \b{eta}-Ga2O3 electronics. |
| title | Strain-Gradient-Driven Decoupling of Thermal Suppression from Anisotropy in \b{eta}-Ga2O3 |
| topic | Materials Science Atomic Physics |
| url | https://arxiv.org/abs/2509.26412 |