An InAsSb surface quantum well with in-situ deposited Nb as a platform for semiconductor-superconductor hybrid devices
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866915528196489216 |
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| author | Telkamp, Sjoerd Lei, Zijin Antonelli, Tommaso Reichl, Christian Besedin, Ilya Jakobs, Georg Fält, Stefan Marty, Christian Schott, Rüdiger Wegscheider, Werner |
| author_facet | Telkamp, Sjoerd Lei, Zijin Antonelli, Tommaso Reichl, Christian Besedin, Ilya Jakobs, Georg Fält, Stefan Marty, Christian Schott, Rüdiger Wegscheider, Werner |
| contents | We present a novel semiconductor-superconductor hybrid material based on a molecular beam epitaxially grown InAsSb surface quantum well with an in-situ deposited Nb top layer. Relative to conventional Al-InAs based systems, the InAsSb surface quantum well offers a lower effective mass and stronger spin-orbit interaction, while the Nb layer has a higher critical temperature and a larger critical magnetic field. The in-situ deposition of the Nb results in a high-quality interface that enables strong coupling to the InAsSb quantum well. Transport measurements on Josephson junctions reveal an induced superconducting gap of 1.3 meV. Furthermore, a planar asymmetric SQUID is realized, exhibiting gate-tunable superimposed oscillations originating from both the individual Josephson junction and the full SQUID loop. The large induced superconducting gap combined with strong spin-orbit interaction position this material as an attractive platform for experiments exploring gate-tunable superconductivity and topological superconducting devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_00711 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | An InAsSb surface quantum well with in-situ deposited Nb as a platform for semiconductor-superconductor hybrid devices Telkamp, Sjoerd Lei, Zijin Antonelli, Tommaso Reichl, Christian Besedin, Ilya Jakobs, Georg Fält, Stefan Marty, Christian Schott, Rüdiger Wegscheider, Werner Superconductivity Mesoscale and Nanoscale Physics Quantum Physics We present a novel semiconductor-superconductor hybrid material based on a molecular beam epitaxially grown InAsSb surface quantum well with an in-situ deposited Nb top layer. Relative to conventional Al-InAs based systems, the InAsSb surface quantum well offers a lower effective mass and stronger spin-orbit interaction, while the Nb layer has a higher critical temperature and a larger critical magnetic field. The in-situ deposition of the Nb results in a high-quality interface that enables strong coupling to the InAsSb quantum well. Transport measurements on Josephson junctions reveal an induced superconducting gap of 1.3 meV. Furthermore, a planar asymmetric SQUID is realized, exhibiting gate-tunable superimposed oscillations originating from both the individual Josephson junction and the full SQUID loop. The large induced superconducting gap combined with strong spin-orbit interaction position this material as an attractive platform for experiments exploring gate-tunable superconductivity and topological superconducting devices. |
| title | An InAsSb surface quantum well with in-situ deposited Nb as a platform for semiconductor-superconductor hybrid devices |
| topic | Superconductivity Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2510.00711 |