Fast and Sensitive Readout of a Semiconductor Quantum Dot Using an In-Situ Microwave Resonator with Enhanced Gate Lever Arm
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arXiv
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| Auteurs principaux: | , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866916982504292352 |
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| author | Wilson, Tim J. Jiang, HongWen |
| author_facet | Wilson, Tim J. Jiang, HongWen |
| contents | We report an experimental study of a Si/SiGe double quantum dot (DQD) directly coupled to a niobium superconducting coplanar stripline (CPS) microwave resonator. This hybrid architecture enables high-bandwidth dispersive readout suitable for real-time feedback and error-correction protocols. Fast and sensitive readout is achieved primarily by optimizing the DQD gate lever arm, guided by MaSQE quantum dot simulations, which enhances the dispersive signal without requiring high-impedance resonators. We demonstrate a signal-to-noise ratio (SNR) of unity with an integration time of 34.54 nanoseconds, corresponding to a system bandwidth of 14.48 MHz and a charge sensitivity of 0.000186 e per square root hertz. Analysis of the voltage power spectral density (PSD) of the in-phase (I) and quadrature (Q) baseband signals characterizes the system's readout noise, with the PSD's dependence on integration time providing insight into distinct physical regimes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_00765 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Fast and Sensitive Readout of a Semiconductor Quantum Dot Using an In-Situ Microwave Resonator with Enhanced Gate Lever Arm Wilson, Tim J. Jiang, HongWen Mesoscale and Nanoscale Physics We report an experimental study of a Si/SiGe double quantum dot (DQD) directly coupled to a niobium superconducting coplanar stripline (CPS) microwave resonator. This hybrid architecture enables high-bandwidth dispersive readout suitable for real-time feedback and error-correction protocols. Fast and sensitive readout is achieved primarily by optimizing the DQD gate lever arm, guided by MaSQE quantum dot simulations, which enhances the dispersive signal without requiring high-impedance resonators. We demonstrate a signal-to-noise ratio (SNR) of unity with an integration time of 34.54 nanoseconds, corresponding to a system bandwidth of 14.48 MHz and a charge sensitivity of 0.000186 e per square root hertz. Analysis of the voltage power spectral density (PSD) of the in-phase (I) and quadrature (Q) baseband signals characterizes the system's readout noise, with the PSD's dependence on integration time providing insight into distinct physical regimes. |
| title | Fast and Sensitive Readout of a Semiconductor Quantum Dot Using an In-Situ Microwave Resonator with Enhanced Gate Lever Arm |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2510.00765 |