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Band Gap Engineering of Nitrogen-Doped Monolayer WSe$_2$ Superlattice and its application to Field Effect Transistor

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Lo, Yi-Cheng, Wang, Liao Jia, Chen, Yu-Chang
Format:	Preprint
Publié:	2025
Sujets:	Mesoscale and Nanoscale Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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