A Physical Unclonable Function Based on Variations of Write Times in STT-MRAM due to Manufacturing Defects
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arXiv
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| Hauptverfasser: | , |
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| Format: | Preprint |
| Veröffentlicht: |
2025
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| _version_ | 1866911438521499648 |
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| author | Huber, Jacob Bandyopadhyay, Supriyo |
| author_facet | Huber, Jacob Bandyopadhyay, Supriyo |
| contents | A physical unclonable function (PUF) utilizes the unclonable random variations in a device's responses to a set of inputs to produce a unique "biometric" that can be used for authentication. The variations are caused by unpredictable, unclonable and random manufacturing defects. Here, we show that the switching time of a magnetic tunnel junction injected with a spin-polarized current generating spin transfer torque is sensitive to the nature of structural defects introduced during manufacturing and hence can be the basis of a PUF. We use micromagnetic simulations to study the switching times under a constant current excitation for six different (commonly encountered) defect morphologies in spin-transfer-torque magnetic random access memory (STT-MRAM) to establish the viability of a PUF. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_02574 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | A Physical Unclonable Function Based on Variations of Write Times in STT-MRAM due to Manufacturing Defects Huber, Jacob Bandyopadhyay, Supriyo Mesoscale and Nanoscale Physics A physical unclonable function (PUF) utilizes the unclonable random variations in a device's responses to a set of inputs to produce a unique "biometric" that can be used for authentication. The variations are caused by unpredictable, unclonable and random manufacturing defects. Here, we show that the switching time of a magnetic tunnel junction injected with a spin-polarized current generating spin transfer torque is sensitive to the nature of structural defects introduced during manufacturing and hence can be the basis of a PUF. We use micromagnetic simulations to study the switching times under a constant current excitation for six different (commonly encountered) defect morphologies in spin-transfer-torque magnetic random access memory (STT-MRAM) to establish the viability of a PUF. |
| title | A Physical Unclonable Function Based on Variations of Write Times in STT-MRAM due to Manufacturing Defects |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2510.02574 |