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| Main Authors: | , |
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| Format: | Preprint |
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2025
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| Online Access: | https://arxiv.org/abs/2510.02786 |
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| _version_ | 1866918153692381184 |
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| author | Im, Hojun Teraoka, Masahiro |
| author_facet | Im, Hojun Teraoka, Masahiro |
| contents | We report the fabrication and photovoltaic performance of a rotationally faulted multilayer graphene (rf-MLG)/n-Si Schottky junction device. A thickness-controlled rf-MLG is synthesized using a 5 μm Ni foil catalyst via the chemical vapor deposition method and transferred to the n-Si substrate via a polymer-free process, enabling facile and cost-effective fabrication. The device demonstrates an ideality factor of 1.67, a rectification factor of approximately 4x10^5 at {\pm}1.0 V, and a Schottky barrier height of 0.83 eV. A strong linear relationship between light intensity and photocurrent is also observed. Furthermore, the device exhibits a peak external quantum efficiency of ~26% at 540 nm and a peak internal quantum efficiency of ~97% at 410 nm. Transient photocurrent and photovoltaic measurements show approximately one-microsecond extraction and several-millisecond recombination times, respectively, revealing effective charge collection for photovoltaic applications. These results indicate that the rf-MLG/n-Si Schottky junction is well-formed and achieves performance comparable to that of SLG devices, demonstrating its potential for optoelectronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_02786 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Photovoltaic Performance of a Rotationally Faulted Multilayer Graphene/n-Si Schottky Junction Im, Hojun Teraoka, Masahiro Materials Science We report the fabrication and photovoltaic performance of a rotationally faulted multilayer graphene (rf-MLG)/n-Si Schottky junction device. A thickness-controlled rf-MLG is synthesized using a 5 μm Ni foil catalyst via the chemical vapor deposition method and transferred to the n-Si substrate via a polymer-free process, enabling facile and cost-effective fabrication. The device demonstrates an ideality factor of 1.67, a rectification factor of approximately 4x10^5 at {\pm}1.0 V, and a Schottky barrier height of 0.83 eV. A strong linear relationship between light intensity and photocurrent is also observed. Furthermore, the device exhibits a peak external quantum efficiency of ~26% at 540 nm and a peak internal quantum efficiency of ~97% at 410 nm. Transient photocurrent and photovoltaic measurements show approximately one-microsecond extraction and several-millisecond recombination times, respectively, revealing effective charge collection for photovoltaic applications. These results indicate that the rf-MLG/n-Si Schottky junction is well-formed and achieves performance comparable to that of SLG devices, demonstrating its potential for optoelectronic applications. |
| title | Photovoltaic Performance of a Rotationally Faulted Multilayer Graphene/n-Si Schottky Junction |
| topic | Materials Science |
| url | https://arxiv.org/abs/2510.02786 |