Using Landau quantization to probe disorder in semiconductor heterostructures

Fuente: arXiv
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Auteurs principaux: Elsayed, Asser, Costa, Davide, Stehouwer, Lucas E. A., Tosato, Alberto, Lodari, Mario, Wuetz, Brian Paquelet, Esposti, Davide Degli, Scappucci, Giordano
Format: Preprint
Publié: 2025
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author Elsayed, Asser
Costa, Davide
Stehouwer, Lucas E. A.
Tosato, Alberto
Lodari, Mario
Wuetz, Brian Paquelet
Esposti, Davide Degli
Scappucci, Giordano
author_facet Elsayed, Asser
Costa, Davide
Stehouwer, Lucas E. A.
Tosato, Alberto
Lodari, Mario
Wuetz, Brian Paquelet
Esposti, Davide Degli
Scappucci, Giordano
contents Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays. Disorder of the parent two-dimensional electron or hole gas is commonly estimated by the critical, percolation-driven density associated with the metal-insulator transition. However, a reliable estimation of the critical density within percolation theory is hindered by the need to measure conductivity with high precision at low carrier densities, where experiments are most difficult. Here, we connect experimentally percolation density and quantum Hall plateau width, in line with an earlier heuristic intuition, and offer an alternative method for characterizing semiconductor heterostructure disorder.
format Preprint
id arxiv_https___arxiv_org_abs_2510_02794
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Using Landau quantization to probe disorder in semiconductor heterostructures
Elsayed, Asser
Costa, Davide
Stehouwer, Lucas E. A.
Tosato, Alberto
Lodari, Mario
Wuetz, Brian Paquelet
Esposti, Davide Degli
Scappucci, Giordano
Mesoscale and Nanoscale Physics
Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays. Disorder of the parent two-dimensional electron or hole gas is commonly estimated by the critical, percolation-driven density associated with the metal-insulator transition. However, a reliable estimation of the critical density within percolation theory is hindered by the need to measure conductivity with high precision at low carrier densities, where experiments are most difficult. Here, we connect experimentally percolation density and quantum Hall plateau width, in line with an earlier heuristic intuition, and offer an alternative method for characterizing semiconductor heterostructure disorder.
title Using Landau quantization to probe disorder in semiconductor heterostructures
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2510.02794