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Main Authors: Athena, Fabia F., Voigt, Cooper A., Tian, Mengkun, Goswami, Anjan, Toph, Emily, Nnaji, Moses, Mammo, Fanuel, Wagner, Brent K., Jeon, Sungho, Cai, Wenshan, Vogel, Eric M.
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2510.03977
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author Athena, Fabia F.
Voigt, Cooper A.
Tian, Mengkun
Goswami, Anjan
Toph, Emily
Nnaji, Moses
Mammo, Fanuel
Wagner, Brent K.
Jeon, Sungho
Cai, Wenshan
Vogel, Eric M.
author_facet Athena, Fabia F.
Voigt, Cooper A.
Tian, Mengkun
Goswami, Anjan
Toph, Emily
Nnaji, Moses
Mammo, Fanuel
Wagner, Brent K.
Jeon, Sungho
Cai, Wenshan
Vogel, Eric M.
contents Since the initial synthesis of van der Waals two-dimensional indium selenide was first documented in 1957, five distinct polymorphs and their corresponding polytypes have been identified. In this study, we report a unique phase of indium selenide via Scanning Transmission Electron Microscopy (STEM) analysis in the synthesized large-area films -- which we have named the $β^\text{p}$ phase. The quintuple layers of the $β^\text{p}$ phase, characterized by a unique zigzag atomic configuration with unequal indium-selenium bond lengths from the middle selenium atom, are distinct from any other previously reported phase of indium selenide. Cross-sectional STEM analysis has revealed that the $β^\text{p}$ layers exhibit intralayer shifting. We found that indium selenide films with $β^\text{p}$ layers display electric-field-induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking of the inversion symmetry. Experimental observations of nonlinear optical phenomena -- Second Harmonic Generation (SHG) responses further support this conclusion. This study reports a $β^\text{p}$ phase of indium selenide showing ferroelectricity over large areas at room temperature in a low-dimensional limit.
format Preprint
id arxiv_https___arxiv_org_abs_2510_03977
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle A van der Waals material exhibiting room temperature broken inversion symmetry with ferroelectricity
Athena, Fabia F.
Voigt, Cooper A.
Tian, Mengkun
Goswami, Anjan
Toph, Emily
Nnaji, Moses
Mammo, Fanuel
Wagner, Brent K.
Jeon, Sungho
Cai, Wenshan
Vogel, Eric M.
Materials Science
Mesoscale and Nanoscale Physics
Applied Physics
Since the initial synthesis of van der Waals two-dimensional indium selenide was first documented in 1957, five distinct polymorphs and their corresponding polytypes have been identified. In this study, we report a unique phase of indium selenide via Scanning Transmission Electron Microscopy (STEM) analysis in the synthesized large-area films -- which we have named the $β^\text{p}$ phase. The quintuple layers of the $β^\text{p}$ phase, characterized by a unique zigzag atomic configuration with unequal indium-selenium bond lengths from the middle selenium atom, are distinct from any other previously reported phase of indium selenide. Cross-sectional STEM analysis has revealed that the $β^\text{p}$ layers exhibit intralayer shifting. We found that indium selenide films with $β^\text{p}$ layers display electric-field-induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking of the inversion symmetry. Experimental observations of nonlinear optical phenomena -- Second Harmonic Generation (SHG) responses further support this conclusion. This study reports a $β^\text{p}$ phase of indium selenide showing ferroelectricity over large areas at room temperature in a low-dimensional limit.
title A van der Waals material exhibiting room temperature broken inversion symmetry with ferroelectricity
topic Materials Science
Mesoscale and Nanoscale Physics
Applied Physics
url https://arxiv.org/abs/2510.03977