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| Autores principales: | , , , , , , , , , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2510.04113 |
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- Janus monolayer transition metal dichalcogenides (TMDs), created by post-growth substitution of the top chalcogen layer, represent a new direction for engineering 2D crystal properties. However, their rapid ambient degradation and the difficulty of obtaining large-area monolayer samples have limited the available experimental probes, leaving their detailed electronic structure near the Fermi level largely unexplored. In this work, by performing micro-focused angle-resolved photoemission spectroscopy (μ-ARPES) on an identical sample transformed from monolayer WSe2 to Janus WSSe via a H2 plasma-assisted chalcogen-exchange method, we reveal the evolution of its electronic band structure. We observe ARPES signature consistent with the Rashba-type spin splitting due to broken horizontal mirror symmetry, and a significant upward shift of the highest valence band at the Γ-point by approximately 160 meV. These direct observations clarify the key electronic modifications that govern the material's properties and provide a pathway for band engineering in Janus TMDs.