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Bibliographic Details
Main Authors:	Sakano, Masato, Akatsuka, Shunsuke, Yamamoto, Takato, Sun, Tianyishan, Bi, Dingkun, Ogura, Hiroto, Yamaguchi, Naoya, Ishii, Fumiyuki, Mitsuishi, Natsuki, Watanabe, Kenji, Taniguchi, Takashi, Kitamura, Miho, Horiba, Koji, Ozawa, Kenichi, Sugawara, Katsuaki, Souma, Seigo, Sato, Takafumi, Seo, Yuta, Masubuchi, Satoru, Machida, Tomoki, Kato, Toshiaki, Ishizaka, Kyoko
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	https://arxiv.org/abs/2510.04113
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Table of Contents:

Janus monolayer transition metal dichalcogenides (TMDs), created by post-growth substitution of the top chalcogen layer, represent a new direction for engineering 2D crystal properties. However, their rapid ambient degradation and the difficulty of obtaining large-area monolayer samples have limited the available experimental probes, leaving their detailed electronic structure near the Fermi level largely unexplored. In this work, by performing micro-focused angle-resolved photoemission spectroscopy (μ-ARPES) on an identical sample transformed from monolayer WSe2 to Janus WSSe via a H2 plasma-assisted chalcogen-exchange method, we reveal the evolution of its electronic band structure. We observe ARPES signature consistent with the Rashba-type spin splitting due to broken horizontal mirror symmetry, and a significant upward shift of the highest valence band at the Γ-point by approximately 160 meV. These direct observations clarify the key electronic modifications that govern the material's properties and provide a pathway for band engineering in Janus TMDs.

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