On the Origin of Carrier Loss in Mg-Doped N-Polar GaN
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arXiv
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| Autori principali: | , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866918255948464128 |
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| author | Kamiyama, Masahiro Rathkanthiwar, Shashwat Quiñones-García, Cristyan Mita, Seiji Khachariya, Dolar Reddy, Pramod Kirste, Ronny Collazo, Ramón Sitar, Zlatko |
| author_facet | Kamiyama, Masahiro Rathkanthiwar, Shashwat Quiñones-García, Cristyan Mita, Seiji Khachariya, Dolar Reddy, Pramod Kirste, Ronny Collazo, Ramón Sitar, Zlatko |
| contents | The neutral $(V_N-3Mg_{Ga})^0$ complex was found to be the primary compensator in Mg-doped, N-polar GaN. The experimental data showed a sharp drop in hole concentration once [Mg] exceeded ~$10^{19} cm^{-3}$. Temperature-dependent Hall measurements, in conjunction with a charge balance model, revealed that the carrier loss was due to a drastic reduction in acceptor concentration ($N_A$), suggesting that a significant fraction of Mg atoms incorporated in an electrically neutral configuration. A quantitative semi-empirical model based on the grand canonical formalism pointed to the formation of $(V_N-3Mg_{Ga})^0$ complexes as the primary cause for the observed carrier loss. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_04381 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | On the Origin of Carrier Loss in Mg-Doped N-Polar GaN Kamiyama, Masahiro Rathkanthiwar, Shashwat Quiñones-García, Cristyan Mita, Seiji Khachariya, Dolar Reddy, Pramod Kirste, Ronny Collazo, Ramón Sitar, Zlatko Materials Science Mesoscale and Nanoscale Physics The neutral $(V_N-3Mg_{Ga})^0$ complex was found to be the primary compensator in Mg-doped, N-polar GaN. The experimental data showed a sharp drop in hole concentration once [Mg] exceeded ~$10^{19} cm^{-3}$. Temperature-dependent Hall measurements, in conjunction with a charge balance model, revealed that the carrier loss was due to a drastic reduction in acceptor concentration ($N_A$), suggesting that a significant fraction of Mg atoms incorporated in an electrically neutral configuration. A quantitative semi-empirical model based on the grand canonical formalism pointed to the formation of $(V_N-3Mg_{Ga})^0$ complexes as the primary cause for the observed carrier loss. |
| title | On the Origin of Carrier Loss in Mg-Doped N-Polar GaN |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2510.04381 |