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Bibliographic Details
Main Authors: Lu, Binyu, Frey, Matthias, Draper, Stark, Zhu, Jingge
Format: Preprint
Published: 2025
Subjects:
Online Access:https://arxiv.org/abs/2510.04402
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Table of Contents:
  • Memristor crossbars enable vector-matrix multiplication (VMM), and are promising for low-power applications. However, it can be difficult to write the memristor conductance values exactly. To improve the accuracy of VMM, we propose a scheme based on low-rank matrix approximation. Specifically, singular value decomposition (SVD) is first applied to obtain a low-rank approximation of the target matrix, which is then factored into a pair of smaller matrices. Subsequently, a two-step serial VMM is executed, where the stochastic write errors are mitigated through step-wise averaging. To evaluate the performance of the proposed scheme, we derive a general expression for the resulting computation error and provide an asymptotic analysis under a prescribed singular-value profile, which reveals how the error scales with matrix size and rank. Both analytical and numerical results confirm the superiority of the proposed scheme compared with the benchmark scheme.