Neutron-Assisted Breakdown Enhancement in $β$-Ga$_2$O$_3$ Schottky Diodes
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2025
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| _version_ | 1866918258622332928 |
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| author | Khan, Saleh Ahmed Saha, Sudipto Ibreljic, Ahmed Margiotta, Stephen Liu, Jiawei Amir, Walid Chakraborty, Surajit Singisetti, Uttam Bhuiyan, A F M Anhar Uddin |
| author_facet | Khan, Saleh Ahmed Saha, Sudipto Ibreljic, Ahmed Margiotta, Stephen Liu, Jiawei Amir, Walid Chakraborty, Surajit Singisetti, Uttam Bhuiyan, A F M Anhar Uddin |
| contents | This study demonstrates a substantial enhancement of breakdown voltage in $β$-Ga$_2$O$_3$ Schottky diodes through an approach that combines fast neutron irradiation with controlled post-irradiation electro-thermal annealing. Devices irradiated with 1 MeV neutrons at a high fluence of 1E15 n/cm^2 exhibited substantial degradation, including a drastic reduction in on-current and an increase in on-resistance. Electrothermal testing, conducted through simultaneous current-voltage (J-V) measurements and thermal annealing, resulted in significant recovery. After four cycles of electro-thermal testing, the devices demonstrated significant improvements in performance, with a substantial recovery of on-current and a reduction in on-resistance compared to the post-radiation condition, approaching pre-radiation levels. Most recovery occurred during the first two cycles, with diminishing improvements in later cycles, indicating that most thermally recoverable traps were mitigated early. Capacitance-voltage (C-V) measurements revealed a substantial reduction in carrier concentration, decreasing from 3.2E16 cm^-3 pre-radiation to 5.5E15 cm^-3 after the first electro-thermal testing cycle, indicating an over 82% reduction. Following the third cycle, the carrier concentration partially recovered to 9.9E15 cm^-3, reflecting a carrier removal rate of ~22 cm^-1. The breakdown voltage exhibited a remarkable enhancement, increasing from approximately 300 V to 1.28 kV (a ~325% improvement) after the first electro-thermal testing, attributed to the reduction in carrier concentration by compensating radiation-induced traps. Subsequent testing reduced breakdown voltage slightly to 940 V due to partial recovery of carrier concentration, but it remained significantly higher than pre-radiation levels. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_06415 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Neutron-Assisted Breakdown Enhancement in $β$-Ga$_2$O$_3$ Schottky Diodes Khan, Saleh Ahmed Saha, Sudipto Ibreljic, Ahmed Margiotta, Stephen Liu, Jiawei Amir, Walid Chakraborty, Surajit Singisetti, Uttam Bhuiyan, A F M Anhar Uddin Applied Physics This study demonstrates a substantial enhancement of breakdown voltage in $β$-Ga$_2$O$_3$ Schottky diodes through an approach that combines fast neutron irradiation with controlled post-irradiation electro-thermal annealing. Devices irradiated with 1 MeV neutrons at a high fluence of 1E15 n/cm^2 exhibited substantial degradation, including a drastic reduction in on-current and an increase in on-resistance. Electrothermal testing, conducted through simultaneous current-voltage (J-V) measurements and thermal annealing, resulted in significant recovery. After four cycles of electro-thermal testing, the devices demonstrated significant improvements in performance, with a substantial recovery of on-current and a reduction in on-resistance compared to the post-radiation condition, approaching pre-radiation levels. Most recovery occurred during the first two cycles, with diminishing improvements in later cycles, indicating that most thermally recoverable traps were mitigated early. Capacitance-voltage (C-V) measurements revealed a substantial reduction in carrier concentration, decreasing from 3.2E16 cm^-3 pre-radiation to 5.5E15 cm^-3 after the first electro-thermal testing cycle, indicating an over 82% reduction. Following the third cycle, the carrier concentration partially recovered to 9.9E15 cm^-3, reflecting a carrier removal rate of ~22 cm^-1. The breakdown voltage exhibited a remarkable enhancement, increasing from approximately 300 V to 1.28 kV (a ~325% improvement) after the first electro-thermal testing, attributed to the reduction in carrier concentration by compensating radiation-induced traps. Subsequent testing reduced breakdown voltage slightly to 940 V due to partial recovery of carrier concentration, but it remained significantly higher than pre-radiation levels. |
| title | Neutron-Assisted Breakdown Enhancement in $β$-Ga$_2$O$_3$ Schottky Diodes |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2510.06415 |