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| Autores principales: | , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2510.08220 |
| Etiquetas: |
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- The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations, we investigate electron transport in Si~(110) systems. At low electric fields, phonon absorption becomes negligible, and mobility is governed by competition between remote Coulomb scattering~(RCS) at low inversion charge density and surface roughness scattering~(SRS) at high density, leading to a mobility peak. High-$κ$ dielectrics such as $\mathrm{HfO_2}$ introduce remote phonon scattering~(RPS), which suppresses mobility. Under high electric fields, phonon emission dominates at 4~K, limiting velocity enhancement and resulting in limited current improvement