Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
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2025
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| author | Bai, Ruixin Mukhopadhyay, Swarnav Elliott, Michael Gilbert, Ryan Chen, Jiahao Choudhury, Rafael A. Kim, Kyudong Wang, Yu-Chun Islam, Ahmad E. Green, Andrew J. Pasayat, Shubhra S. Gupta, Chirag |
| author_facet | Bai, Ruixin Mukhopadhyay, Swarnav Elliott, Michael Gilbert, Ryan Chen, Jiahao Choudhury, Rafael A. Kim, Kyudong Wang, Yu-Chun Islam, Ahmad E. Green, Andrew J. Pasayat, Shubhra S. Gupta, Chirag |
| contents | In this work, we demonstrate a passivation-free Ga-polar recessed-gate AlGaN/GaN HEMT on a sapphire substrate for W-band operation, featuring a 5.5 nm Al0.35Ga0.65N barrier under the gate and a 31 nm Al0.35Ga0.65N barrier in the gate access regions. The device achieves a drain current density of 1.8 A/mm, a peak transconductance of 750 mS/mm, and low gate leakage with a high on/off ratio of 10^7. Small-signal characterization reveals a current-gain cutoff frequency of 127 GHz and a maximum oscillation frequency of 203 GHz. Continuous-wave load-pull measurements at 94 GHz demonstrate an output power density of 2.8 W/mm with 26.8% power-added efficiency (PAE), both of which represent the highest values reported for Ga-polar GaN HEMTs on sapphire substrates and are comparable to state-of-the-art Ga-polar GaN HEMTs on SiC substrates. Considering the low cost of sapphire, the simplicity of the epitaxial design, and the reduced fabrication complexity relative to N-polar devices, this work highlights the potential of recessed-gate Ga-polar AlGaN/GaN HEMTs on sapphire as a promising candidate for next-generation millimeter-wave power applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_08933 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz Bai, Ruixin Mukhopadhyay, Swarnav Elliott, Michael Gilbert, Ryan Chen, Jiahao Choudhury, Rafael A. Kim, Kyudong Wang, Yu-Chun Islam, Ahmad E. Green, Andrew J. Pasayat, Shubhra S. Gupta, Chirag Applied Physics In this work, we demonstrate a passivation-free Ga-polar recessed-gate AlGaN/GaN HEMT on a sapphire substrate for W-band operation, featuring a 5.5 nm Al0.35Ga0.65N barrier under the gate and a 31 nm Al0.35Ga0.65N barrier in the gate access regions. The device achieves a drain current density of 1.8 A/mm, a peak transconductance of 750 mS/mm, and low gate leakage with a high on/off ratio of 10^7. Small-signal characterization reveals a current-gain cutoff frequency of 127 GHz and a maximum oscillation frequency of 203 GHz. Continuous-wave load-pull measurements at 94 GHz demonstrate an output power density of 2.8 W/mm with 26.8% power-added efficiency (PAE), both of which represent the highest values reported for Ga-polar GaN HEMTs on sapphire substrates and are comparable to state-of-the-art Ga-polar GaN HEMTs on SiC substrates. Considering the low cost of sapphire, the simplicity of the epitaxial design, and the reduced fabrication complexity relative to N-polar devices, this work highlights the potential of recessed-gate Ga-polar AlGaN/GaN HEMTs on sapphire as a promising candidate for next-generation millimeter-wave power applications. |
| title | Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2510.08933 |