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Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz

Fuente: arXiv

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Bibliographic Details
Main Authors:	Bai, Ruixin, Mukhopadhyay, Swarnav, Elliott, Michael, Gilbert, Ryan, Chen, Jiahao, Choudhury, Rafael A., Kim, Kyudong, Wang, Yu-Chun, Islam, Ahmad E., Green, Andrew J., Pasayat, Shubhra S., Gupta, Chirag
Format:	Preprint
Published:	2025
Subjects:	Applied Physics
Online Access:	Acceder al recurso
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