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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2510.09252 |
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| _version_ | 1866918352335667200 |
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| author | Vogl, David A. Braitsch, Noah L. Özcan, Başak Ç. Vart, Niklas S. Thewalt, M. L. W. Brandt, Martin S. |
| author_facet | Vogl, David A. Braitsch, Noah L. Özcan, Başak Ç. Vart, Niklas S. Thewalt, M. L. W. Brandt, Martin S. |
| contents | We present a comprehensive experimental study of the neutral donor to donor-bound exciton transition (D$^0$$\rightarrow\,$D$^0$X) in isotopically enriched $^{28}$Si, focusing on the group-V donors P, As, and Sb under finely tuned uniaxial stress along the [100] and [110] crystal axes and magnetic fields from 3.5 mT to 1.7 T. From these measurements, donor-specific deformation potentials are extracted. The uniaxial electron deformation potential $Ξ_\mathrm{u}$ is found to be significantly larger than values reported for other states or transitions in silicon and shows a clear dependence on the donor species, indicating an increased sensitivity of the D$^0$X state to strain and central-cell effects. We also observe a magnetic field dependence of the hole shear deformation potential $d$, suggesting a more complex strain coupling mechanism than captured by standard theory. Diamagnetic shift parameters determined from Zeeman spectra show good agreement with earlier measurements. Our results provide a refined parameter set critical for the design of silicon quantum devices based on D$^0$X transitions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_09252 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Strained Donor-Bound Excitons in $^{28}$Si Vogl, David A. Braitsch, Noah L. Özcan, Başak Ç. Vart, Niklas S. Thewalt, M. L. W. Brandt, Martin S. Materials Science Quantum Physics We present a comprehensive experimental study of the neutral donor to donor-bound exciton transition (D$^0$$\rightarrow\,$D$^0$X) in isotopically enriched $^{28}$Si, focusing on the group-V donors P, As, and Sb under finely tuned uniaxial stress along the [100] and [110] crystal axes and magnetic fields from 3.5 mT to 1.7 T. From these measurements, donor-specific deformation potentials are extracted. The uniaxial electron deformation potential $Ξ_\mathrm{u}$ is found to be significantly larger than values reported for other states or transitions in silicon and shows a clear dependence on the donor species, indicating an increased sensitivity of the D$^0$X state to strain and central-cell effects. We also observe a magnetic field dependence of the hole shear deformation potential $d$, suggesting a more complex strain coupling mechanism than captured by standard theory. Diamagnetic shift parameters determined from Zeeman spectra show good agreement with earlier measurements. Our results provide a refined parameter set critical for the design of silicon quantum devices based on D$^0$X transitions. |
| title | Strained Donor-Bound Excitons in $^{28}$Si |
| topic | Materials Science Quantum Physics |
| url | https://arxiv.org/abs/2510.09252 |