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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2510.09525 |
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| _version_ | 1866915544754552832 |
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| author | Scali, Francesco Finazzi, Marco Bottegoni, Federico Zucchetti, Carlo |
| author_facet | Scali, Francesco Finazzi, Marco Bottegoni, Federico Zucchetti, Carlo |
| contents | Optical orientation has been proven as a powerful tool to inject spin-polarized electron and hole populations in III-V and group-IV semiconductors. In particular, the absorption of circularly-polarized light in bulk Ge generates a spin-oriented population of electrons in the conduction band with a spin-polarization up to 50%, whereas the hole spin-polarization, opposite to the electron one, can even reach values up to 83%. In this letter, we theoretically investigate the optical injection of orbital polarization by means of circularly-polarized light in bulk Ge and we show that the latter considerably exceeds 100% for holes and photon energies close to the direct Ge gap. These results suggest that Ge is a convenient platform for future development of orbitronics and opto-orbitronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_09525 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Optically induced orbital polarization in bulk germanium Scali, Francesco Finazzi, Marco Bottegoni, Federico Zucchetti, Carlo Materials Science Optical orientation has been proven as a powerful tool to inject spin-polarized electron and hole populations in III-V and group-IV semiconductors. In particular, the absorption of circularly-polarized light in bulk Ge generates a spin-oriented population of electrons in the conduction band with a spin-polarization up to 50%, whereas the hole spin-polarization, opposite to the electron one, can even reach values up to 83%. In this letter, we theoretically investigate the optical injection of orbital polarization by means of circularly-polarized light in bulk Ge and we show that the latter considerably exceeds 100% for holes and photon energies close to the direct Ge gap. These results suggest that Ge is a convenient platform for future development of orbitronics and opto-orbitronic devices. |
| title | Optically induced orbital polarization in bulk germanium |
| topic | Materials Science |
| url | https://arxiv.org/abs/2510.09525 |