Ambient-Stable Transfer-Free Graphdiyne Wafers with Superhigh Hole Mobility at Room Temperature
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866918158651097088 |
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| author | Ma, Beining Qi, Jianyuan Shen, Xinghai |
| author_facet | Ma, Beining Qi, Jianyuan Shen, Xinghai |
| contents | Graphdiyne (GDY) is recognized as a compelling candidate for the fabrication of next-generation high-speed low-energy electronic devices due to its inherent p-type semiconductor characteristics. However, the development of GDY for applications in field-effect transistors (FETs), complementary metal-oxide-semiconductor (CMOS), and logic devices remains constrained by the relatively low carrier mobility reported in current experimental studies. Herein, the synthesis of layer-controlled hydrogen-substituted graphdiyne (HsGDY) films directly on silicon substrates under a supercritical CO2 atmosphere is reported, along with the fabrication of these films into HsGDY-based FETs. The transfer-free growth strategy eliminates performance degradation caused by post-synthesis transfer processes. The resulting HsGDY FETs exhibit a remarkable hole mobility of up to 3800 cm2 V-1 s-1 at room-temperature, which is an order of magnitude higher than that of most p-type semiconductors. The synthesis of transfer-free HsGDY wafers provides a new strategy for resolving the carrier mobility mismatch between p-channel and n-channel two-dimensional metal-oxide-semiconductor devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2510_09998 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ambient-Stable Transfer-Free Graphdiyne Wafers with Superhigh Hole Mobility at Room Temperature Ma, Beining Qi, Jianyuan Shen, Xinghai Materials Science Chemical Physics Graphdiyne (GDY) is recognized as a compelling candidate for the fabrication of next-generation high-speed low-energy electronic devices due to its inherent p-type semiconductor characteristics. However, the development of GDY for applications in field-effect transistors (FETs), complementary metal-oxide-semiconductor (CMOS), and logic devices remains constrained by the relatively low carrier mobility reported in current experimental studies. Herein, the synthesis of layer-controlled hydrogen-substituted graphdiyne (HsGDY) films directly on silicon substrates under a supercritical CO2 atmosphere is reported, along with the fabrication of these films into HsGDY-based FETs. The transfer-free growth strategy eliminates performance degradation caused by post-synthesis transfer processes. The resulting HsGDY FETs exhibit a remarkable hole mobility of up to 3800 cm2 V-1 s-1 at room-temperature, which is an order of magnitude higher than that of most p-type semiconductors. The synthesis of transfer-free HsGDY wafers provides a new strategy for resolving the carrier mobility mismatch between p-channel and n-channel two-dimensional metal-oxide-semiconductor devices. |
| title | Ambient-Stable Transfer-Free Graphdiyne Wafers with Superhigh Hole Mobility at Room Temperature |
| topic | Materials Science Chemical Physics |
| url | https://arxiv.org/abs/2510.09998 |