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| Main Authors: | , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2510.10521 |
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| _version_ | 1866915985149132800 |
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| author | Wang, Baoyu Zou, Lingrui Wang, Tao Xu, Lijun Dong, Zexin Qin, Chuan He, Xin Lan, Shangui Ma, Yinchang Tang, Meng Chen, Maolin Liu, Chen Luo, Zheng-Dong Zhang, Lijie Wu, Zhenhua Liu, Yan Han, Genquan Yu, Bin Zhang, Xixiang Chang, Kai Xue, Fei |
| author_facet | Wang, Baoyu Zou, Lingrui Wang, Tao Xu, Lijun Dong, Zexin Qin, Chuan He, Xin Lan, Shangui Ma, Yinchang Tang, Meng Chen, Maolin Liu, Chen Luo, Zheng-Dong Zhang, Lijie Wu, Zhenhua Liu, Yan Han, Genquan Yu, Bin Zhang, Xixiang Chang, Kai Xue, Fei |
| contents | Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine device performances or functionalities. Creating tunable depletion regions with substantially suppressed leakage currents presents huge challenges, but is crucial for heterojunction applications. Here, by using band-aligned p-type SnSe and n-type ferroelectric α-In2Se3 as a model, we report near-ideal multifunctional vdW p-n heterojunctions with small reverse leakage currents (0.1 pA) and a desired diode ideality factor (1.95). We realize ferroelectric-tuned band alignment with a giant barrier modulation of 900 meV. Based on such tunable heterojunctions, we propose and demonstrate a fundamental different memory device termed ferroelectric junction field-effect transistor memory, which shows large memory windows (1.8 V), ultrafast speed (100 ns), high operation temperature (393 K), and low cycle-to-cycle variation (2%). Additionally, the reliable synaptic characteristics of these memory devices promise low-power neuromorphic computing. Our work provides a new device platform with switchable memory heterojunctions, applicable to high performance brain-inspired electronics and optoelectronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_10521 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | A ferroelectric junction transistor memory made from switchable van der Waals p-n heterojunctions Wang, Baoyu Zou, Lingrui Wang, Tao Xu, Lijun Dong, Zexin Qin, Chuan He, Xin Lan, Shangui Ma, Yinchang Tang, Meng Chen, Maolin Liu, Chen Luo, Zheng-Dong Zhang, Lijie Wu, Zhenhua Liu, Yan Han, Genquan Yu, Bin Zhang, Xixiang Chang, Kai Xue, Fei Materials Science Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine device performances or functionalities. Creating tunable depletion regions with substantially suppressed leakage currents presents huge challenges, but is crucial for heterojunction applications. Here, by using band-aligned p-type SnSe and n-type ferroelectric α-In2Se3 as a model, we report near-ideal multifunctional vdW p-n heterojunctions with small reverse leakage currents (0.1 pA) and a desired diode ideality factor (1.95). We realize ferroelectric-tuned band alignment with a giant barrier modulation of 900 meV. Based on such tunable heterojunctions, we propose and demonstrate a fundamental different memory device termed ferroelectric junction field-effect transistor memory, which shows large memory windows (1.8 V), ultrafast speed (100 ns), high operation temperature (393 K), and low cycle-to-cycle variation (2%). Additionally, the reliable synaptic characteristics of these memory devices promise low-power neuromorphic computing. Our work provides a new device platform with switchable memory heterojunctions, applicable to high performance brain-inspired electronics and optoelectronics. |
| title | A ferroelectric junction transistor memory made from switchable van der Waals p-n heterojunctions |
| topic | Materials Science |
| url | https://arxiv.org/abs/2510.10521 |