Weak-anti-localization-to-spin-dependent scattering at a proximity-magnetized heavy metal interface
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866917006720106496 |
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| author | Matsuki, Hisakazu Yang, Guang Xu, Jiahui Golovach, Vitaly N. He, Yu Li, Jiaxu Hijano, Alberto Banerjee, Niladri Alekhina, Iuliia Stelmashenko, Nadia Bergeret, F. Sebastian Robinson, Jason W. A. |
| author_facet | Matsuki, Hisakazu Yang, Guang Xu, Jiahui Golovach, Vitaly N. He, Yu Li, Jiaxu Hijano, Alberto Banerjee, Niladri Alekhina, Iuliia Stelmashenko, Nadia Bergeret, F. Sebastian Robinson, Jason W. A. |
| contents | A change in a materials electrical resistance with magnetic field (magnetoresistance) results from quantum interference effects and, or spin-dependent transport, depending on materials properties and dimensionality. In disordered conductors, electron interference leads to weak localization or anti-localization; in contrast, ferromagnetic conductors support spin-dependent scattering, leading to giant magnetoresistance (GMR). By varying the thickness of Au between 4 and 28 nm in a EuS/Au/EuS spin-switches, we observe a crossover from weak anti-localization to interfacial GMR. The crossover is related to a magnetic proximity effect in Au due to electron scattering at the insulating EuS interface. The proximity-induced exchange field in Au suppresses weak anti-localization, consistent with Maekawa-Fukuyama theory. With increasing Au thickness, GMR emerges along with spin Hall magnetoresistance. These findings demonstrate spin transport governed by interfacial exchange fields, building a framework for spintronic functionality without metallic magnetism. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_10595 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Weak-anti-localization-to-spin-dependent scattering at a proximity-magnetized heavy metal interface Matsuki, Hisakazu Yang, Guang Xu, Jiahui Golovach, Vitaly N. He, Yu Li, Jiaxu Hijano, Alberto Banerjee, Niladri Alekhina, Iuliia Stelmashenko, Nadia Bergeret, F. Sebastian Robinson, Jason W. A. Materials Science Mesoscale and Nanoscale Physics A change in a materials electrical resistance with magnetic field (magnetoresistance) results from quantum interference effects and, or spin-dependent transport, depending on materials properties and dimensionality. In disordered conductors, electron interference leads to weak localization or anti-localization; in contrast, ferromagnetic conductors support spin-dependent scattering, leading to giant magnetoresistance (GMR). By varying the thickness of Au between 4 and 28 nm in a EuS/Au/EuS spin-switches, we observe a crossover from weak anti-localization to interfacial GMR. The crossover is related to a magnetic proximity effect in Au due to electron scattering at the insulating EuS interface. The proximity-induced exchange field in Au suppresses weak anti-localization, consistent with Maekawa-Fukuyama theory. With increasing Au thickness, GMR emerges along with spin Hall magnetoresistance. These findings demonstrate spin transport governed by interfacial exchange fields, building a framework for spintronic functionality without metallic magnetism. |
| title | Weak-anti-localization-to-spin-dependent scattering at a proximity-magnetized heavy metal interface |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2510.10595 |