Unveiling the growth mode diagram of GaSe on sapphire
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arXiv
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| Autores principales: | , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
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| _version_ | 1866915719210336256 |
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| author | Bissolo, M. Dembecki, M. Belz, J. Schabesberger, J. Bergmann, M. Avdienko, P. Rauscher, F. Ulhe, A. S. Riedl, H. Volz, K. Finley, J. J. Zallo, E. Koblmüller, G. |
| author_facet | Bissolo, M. Dembecki, M. Belz, J. Schabesberger, J. Bergmann, M. Avdienko, P. Rauscher, F. Ulhe, A. S. Riedl, H. Volz, K. Finley, J. J. Zallo, E. Koblmüller, G. |
| contents | The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-inch c-plane sapphire substrates. Using in-situ reflection high-energy electron diffraction (RHEED), in-situ Raman spectroscopy, optical and scanning electron microscopies, we construct a diagram of the gallium selenide growth modes as a function of substrate temperature (530-650 °C) and Se/Ga flux ratio (5-110). The growth mode diagram reveals distinct regimes, including the growth of layered post-transition metal monochalcogenide GaSe with an unstrained in-plane lattice constant of 0.371$\pm$0.001 nm and a partial epitaxial alignment on sapphire. This work demonstrates a RHEED-based pathway for synthesizing gallium selenide of specific phase and morphology, and the construction of a phase diagram for high vapor pressure III-VI compounds that can be applied to a wide range of other metal chalcogenide materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_10743 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Unveiling the growth mode diagram of GaSe on sapphire Bissolo, M. Dembecki, M. Belz, J. Schabesberger, J. Bergmann, M. Avdienko, P. Rauscher, F. Ulhe, A. S. Riedl, H. Volz, K. Finley, J. J. Zallo, E. Koblmüller, G. Materials Science The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-inch c-plane sapphire substrates. Using in-situ reflection high-energy electron diffraction (RHEED), in-situ Raman spectroscopy, optical and scanning electron microscopies, we construct a diagram of the gallium selenide growth modes as a function of substrate temperature (530-650 °C) and Se/Ga flux ratio (5-110). The growth mode diagram reveals distinct regimes, including the growth of layered post-transition metal monochalcogenide GaSe with an unstrained in-plane lattice constant of 0.371$\pm$0.001 nm and a partial epitaxial alignment on sapphire. This work demonstrates a RHEED-based pathway for synthesizing gallium selenide of specific phase and morphology, and the construction of a phase diagram for high vapor pressure III-VI compounds that can be applied to a wide range of other metal chalcogenide materials. |
| title | Unveiling the growth mode diagram of GaSe on sapphire |
| topic | Materials Science |
| url | https://arxiv.org/abs/2510.10743 |