In-situ Radiation Damage Study of Silicon Carbide Detectors Subjected to Clinical Proton Beams

Documenti analoghi

• Extraction of Electron and Hole Drift Velocities in thin 4H-SiC PIN Detectors using High-Frequency Readout Electronics
  di: Gsponer, Andreas, et al.
  Pubblicazione: (2025)
• Characterizing the Delivered Spill Structure of Medical Proton and Carbon-Ion Beams at MedAustron using a High Frequency Silicon Carbide Readout
  di: Knopf, Matthias, et al.
  Pubblicazione: (2025)
• TCAD Simulations of Radiation Damage in 4H-SiC
  di: Burin, Jürgen, et al.
  Pubblicazione: (2024)
• Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements
  di: Gsponer, Andreas, et al.
  Pubblicazione: (2024)
• Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode
  di: Gsponer, Andreas, et al.
  Pubblicazione: (2023)