Superconducting spin valve effect in Fe/Si$_3$N$_4$/Pb/Si$_3$N$_4$/Fe heterostructures

Fuente: arXiv
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Hauptverfasser: Kamashev, A. A., Garif'yanov, N. N., Validov, A. A., Osin, A. S., Fominov, Ya. V., Garifullin, I. A.
Format: Preprint
Veröffentlicht: 2025
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author Kamashev, A. A.
Garif'yanov, N. N.
Validov, A. A.
Osin, A. S.
Fominov, Ya. V.
Garifullin, I. A.
author_facet Kamashev, A. A.
Garif'yanov, N. N.
Validov, A. A.
Osin, A. S.
Fominov, Ya. V.
Garifullin, I. A.
contents The structures of the superconducting spin valve (SSV) Fe/Si$_3$N$_4$/Pb/Si$_3$N$_4$/Fe (where Si$_3$N$_4$ is a dielectric insulating layer of controlled thickness) were investigated. The dependence of the magnitude of the SSV effect on the thicknesses of the superconducting (S) and insulating (I) layers was studied. Optimization of the S and I layer thicknesses enabled a complete switching between the normal and superconducting states when the mutual orientation of the magnetizations of the ferromagnetic (F) layers changed from antiparallel to parallel. A maximal SSV effect value of 0.36\,K was achieved in an external magnetic field of 1\,kOe. These results demonstrate that SSV structures with tunable S/F interface transparency controlled by insulating interlayers are promising for achieving a significant magnitude of the effect. This opens new avenues for the development of such systems and their potential applications in spintronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2510_11333
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Superconducting spin valve effect in Fe/Si$_3$N$_4$/Pb/Si$_3$N$_4$/Fe heterostructures
Kamashev, A. A.
Garif'yanov, N. N.
Validov, A. A.
Osin, A. S.
Fominov, Ya. V.
Garifullin, I. A.
Superconductivity
The structures of the superconducting spin valve (SSV) Fe/Si$_3$N$_4$/Pb/Si$_3$N$_4$/Fe (where Si$_3$N$_4$ is a dielectric insulating layer of controlled thickness) were investigated. The dependence of the magnitude of the SSV effect on the thicknesses of the superconducting (S) and insulating (I) layers was studied. Optimization of the S and I layer thicknesses enabled a complete switching between the normal and superconducting states when the mutual orientation of the magnetizations of the ferromagnetic (F) layers changed from antiparallel to parallel. A maximal SSV effect value of 0.36\,K was achieved in an external magnetic field of 1\,kOe. These results demonstrate that SSV structures with tunable S/F interface transparency controlled by insulating interlayers are promising for achieving a significant magnitude of the effect. This opens new avenues for the development of such systems and their potential applications in spintronic devices.
title Superconducting spin valve effect in Fe/Si$_3$N$_4$/Pb/Si$_3$N$_4$/Fe heterostructures
topic Superconductivity
url https://arxiv.org/abs/2510.11333