High Throughput Optical Switching in Telecommunication Band via Hybrid Phase Change Metasurfaces
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| Autores principales: | , , , , , , , , , , , , |
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| Formato: | Preprint |
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2025
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| _version_ | 1866909843601752064 |
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| author | Zamani, Amin Sanderson, Gabriel Zhang, Lu Miao, Qiwei Moujdi, Sara Zheng, Ze Momtazpour, Mohammadhossein Mellor, Christopher J. Zhang, Wending Mei, Ting Mansouri, Zakaria Xu, Lei Rahmani, Mohsen |
| author_facet | Zamani, Amin Sanderson, Gabriel Zhang, Lu Miao, Qiwei Moujdi, Sara Zheng, Ze Momtazpour, Mohammadhossein Mellor, Christopher J. Zhang, Wending Mei, Ting Mansouri, Zakaria Xu, Lei Rahmani, Mohsen |
| contents | The growing demand for more efficient data transmission has made nanoscale high-throughput all-optical switching a critical requirement in modern telecommunication systems. Metasurface-based platforms offer unique advantages because of their compact design, energy efficiency, and the ability to precisely manipulate light at the subwavelength scale, in a contact-less fashion. However, achieving both high transmission modulation and low optical loss in the telecom band remains a challenge. This study develops monolithic and hybrid metasurfaces based on the phase change material antimony trisulfide (Sb$_2$S$_3$) to address this limitation. First, we demonstrate the capability of Sb$_2$S$_3$ to offer up to ~91 percent modulation, even with a magnetic dipole - a low-Q resonance. It lifts the requirement for complex precisely fabricated metasurfaces, a long-standing limitation in the community for all optical switching. Furthermore, with the most straightforward hybridisation approach, i.e. depositing a thin film of silicon, we improved the simulated modulation depth to 99 percent. Experimentally, over 80 percent modulation was achieved for both hybrid and monolithic structures, with nearly 2-fold less power required for switching in the hybrid design whilst maintaining high modulation depth. This performance results from the significant refractive index tunability of Sb$_2$S$_3$ and its intrinsically low optical loss (k < 10^{-4}) in the telecom band, further enhanced by silicon integration. The demonstrated metasurfaces offer an effective and scalable approach for all-optical light modulation with strong potential for integration into CMOS-compatible photonic circuits and next-generation telecommunications systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_11881 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High Throughput Optical Switching in Telecommunication Band via Hybrid Phase Change Metasurfaces Zamani, Amin Sanderson, Gabriel Zhang, Lu Miao, Qiwei Moujdi, Sara Zheng, Ze Momtazpour, Mohammadhossein Mellor, Christopher J. Zhang, Wending Mei, Ting Mansouri, Zakaria Xu, Lei Rahmani, Mohsen Optics The growing demand for more efficient data transmission has made nanoscale high-throughput all-optical switching a critical requirement in modern telecommunication systems. Metasurface-based platforms offer unique advantages because of their compact design, energy efficiency, and the ability to precisely manipulate light at the subwavelength scale, in a contact-less fashion. However, achieving both high transmission modulation and low optical loss in the telecom band remains a challenge. This study develops monolithic and hybrid metasurfaces based on the phase change material antimony trisulfide (Sb$_2$S$_3$) to address this limitation. First, we demonstrate the capability of Sb$_2$S$_3$ to offer up to ~91 percent modulation, even with a magnetic dipole - a low-Q resonance. It lifts the requirement for complex precisely fabricated metasurfaces, a long-standing limitation in the community for all optical switching. Furthermore, with the most straightforward hybridisation approach, i.e. depositing a thin film of silicon, we improved the simulated modulation depth to 99 percent. Experimentally, over 80 percent modulation was achieved for both hybrid and monolithic structures, with nearly 2-fold less power required for switching in the hybrid design whilst maintaining high modulation depth. This performance results from the significant refractive index tunability of Sb$_2$S$_3$ and its intrinsically low optical loss (k < 10^{-4}) in the telecom band, further enhanced by silicon integration. The demonstrated metasurfaces offer an effective and scalable approach for all-optical light modulation with strong potential for integration into CMOS-compatible photonic circuits and next-generation telecommunications systems. |
| title | High Throughput Optical Switching in Telecommunication Band via Hybrid Phase Change Metasurfaces |
| topic | Optics |
| url | https://arxiv.org/abs/2510.11881 |